Samsung Electronics Co., Ltd.

Younggeun Lee

Youngsik Kim

Jeongho Lee

Youngkwang Yoo

Seungyou Baek

Youngjin Cho

Eunchu Oh

Jinwoo Kim

Hyo-Deok Shin

Yena Lee

Eun Chu Oh

Han-Ju Lee

Jin-Hyeok Choi

Jaegeun Park

Hee Hyun Nam

Kyungbo Yang

Hwan-Chung Kim

Ji-Seung Youn

Junghyo Woo

Hyun-Wook Lee

Jeonghoon Cho

Seong Yeon Kim

A memory controller for controlling a memory operation of a memory device includes: an error correction code (ECC) circuit configured to detect an error of first read data read from the memory device and correct the error; an error type detection logic configured to write first write data to the memory device, compare second read data with the first write data, detect an error bit of the second read data based on a result of the comparing, and output information about an error type identified by the error bit; and a data patterning logic configured to change a bit pattern of input data to reduce an error of the second read data based on the information about the error type.

Memory controller, memory system including the same, and method of operating the memory controller

An operating method of a memory device, which includes a first memory region and a second memory region, includes reading first data from the first memory region and storing the read first data in a data buffer block, performing a first XOR operation on the first data provided from the data buffer block and second data read from the second memory region to generate first result data, writing the first data stored in the data buffer block in the second memory region, performing a second XOR operation on the first data and the first result data to generate the second data, storing the generated second data in the data buffer block, and writing the second data stored in the data buffer block in the first memory region.

Memory device for swapping data and operating method thereof

A storage device includes a nonvolatile memory including a plurality of nonvolatile memory cells, a write buffer memory storing first data and second data received from a host, and a storage controller storing the first data and the second data that are stored in the write buffer memory into the nonvolatile memory. The storage controller performs a first program operation and a second program operation on a plurality of first memory cells connected to a first word line group to store the first data, and performs a first program operation and a second program operation on a plurality of second memory cells connected to a second word line group to store the second data. While the storage controller performs the first program operation on the plurality of second memory cells, the first data is written in the write buffer memory.

Storage device including write buffer memory and method of operating storage device

A storage device includes a nonvolatile memory and a controller. The controller includes a job manager circuit and a processor. The job manager circuit manages a first-type job associated with the nonvolatile memory, and the processor processes a second-type job associated with the nonvolatile memory. The job manager circuit manages the first-type job without intervention of the processor. The processor provides a management command to the job manager circuit in response to a notification received from the job manager circuit, such that the second-type job is processed.

Storage device capable of managing jobs without intervention of a processor

A storage device includes nonvolatile memories and a controller. The controller previously manages a correspondence relationship between physical addresses indicating the memory regions and stream identifiers, before first write data is received by the controller. The controller controls the nonvolatile memories such that the first write data is stored in a first memory region of a physical address which is managed corresponding to a first stream identifier of the first write data in the correspondence relationship. The first write data is transferred to the nonvolatile memories based on the correspondence relationship, regardless of whether second write data having a second stream identifier is received by the controller.

Storage device previously managing physical address to be allocated for write data

Disclosed is a memory system. The memory system includes a volatile memory device configured to exchange data with a host through a first channel, a nonvolatile memory device, and a memory controller connected with the volatile memory device through a second channel. The memory controller detects a request of the host or a power state and controls the volatile memory device and the nonvolatile memory device based on the detection result such that data stored in the volatile memory device is backed up in the nonvolatile memory device through the second channel. The volatile memory device includes a first interface for communicating with the host through the first channel and a second interface for communicating with the memory controller through the second channel.

Nonvolatile memory module having backup function

A nonvolatile memory system includes first and second nonvolatile memory devices and a memory controller configured to control the first and second nonvolatile memory devices through one channel. During a program operation, the memory controller transmits first signals, for setting first page data up in the first nonvolatile memory device, to the first nonvolatile memory device through the channel. While the first nonvolatile memory device sets up the first page data in response to the first signals, the memory controller transmits second signals, for setting second page data up in the second nonvolatile memory device, to the second nonvolatile memory device.

Nonvolatile memory device and program method thereof

An embedded memory device includes a mask ROM including a plurality of mask ROM cells and an address decoder configured to decode an address of the plurality of mask ROM cells; and an e-fuse memory configured to replace a part of data stored in the mask ROM with replacement data, the e-fuse memory including, a plurality of e-fuse memory cells configured to store the replacement data, and an e-fuse address selector configured to decode an address of the plurality of e-fuse memory cells and to selectively cause data of one or more of the plurality of e-fuse memory cells to be output based on the decoding result.

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Seoul, South Korea

Younggeun Lee