Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Industry-University Cooperation Foundation Hanyang University

Nanyang Technological University

Iucf-hyu (industry-university Cooperation Four

Youngdon Choi

Junghwan Choi

Younghoon Son

Hyunyoon Cho

Jindo Byun

Jaewoo Park

Youngchul Cho

Hyungmin Jin

Myoungbo Kwak

Seungjin Park

Hojun Yoon

Changkyu Seol

Junyoung Park

Eunseok Shin

Sucheol Lee

Jinsoo Lim

Seunghoon Lee

Mingyu Lee

Pilsang Yoon

Joohwan Kim

Changsik Yoo

Hyejeong So

Jiyoup Kim

Daewook Kim

Doobock Lee

Wonjoo Jung

Hyunsub Rie

Baek Jin Lim

Sangsoo Lee

Dongjin Park

Inkeun Ryu

Woohyuk Choi

Seunghyun Yun

Seokmin Hong

Youngdo Um

Hyunseok Hwang

Sukhee Cho

Kwangsik Yoo

Kihoon Nam

Kwangseob Shin

Changsoo Yoon

Jangil Lee

Young Hee Choi

Sanghun Lee

Jeonghyu Yang

Young-Hoon Son

Jaeduk Han

Hyun-Yoon Cho

Jueon Kim

Hyuntae Kim

ChangSik Yoo

Jinha Hwang

Sanglok Kim

Taehyoung Kim

Baekjin Lim

Hyeokjun Choi

Young Kil Choi

Jaeha Kim

Meyong Su Ko

Donghyun Yoon

Hyoungbae Ahn

A parallel-to-serial converter includes first to fourth input nodes configured to receive first to fourth data input signals, respectively, and an output node configured to output a data output signal. First to fourth logic circuits are provided, which are configured to electrically couple respective ones of the first to fourth input nodes one-at-a-time to the output node, in synchronization with first to fourth clock signals. The first logic circuit includes a first input circuit, a second input circuit, and an output circuit electrically coupled to the first and second input circuits. The output circuit includes a first pull-up transistor and a first pull-down transistor having drain terminals coupled to the output node, a second pull-up transistor connected between a source terminal of the first pull-up transistor and a first power supply node, and a second pull-down transistor connected between a source terminal of the first pull-down transistor and a second power supply node.

Semiconductor devices having parallel-to-serial converters therein

A receiver for receiving a data signal, comprising, an analog-to-digital converter configured to convert the data signal into digital data, a first-in-first-out buffer configured to determine a frame boundary of the digital data by referring to a comma index to output the digital data in units of data frames according to the determined frame boundary, a decision feedback equalizer configured to process a data frame output from the first-in-first-out buffer through a decision feedback equalization operation, wherein feedback data used in the decision feedback equalization operation of the data frame uses a predetermined fixed pattern, and a comma detector configured to generate the comma index by comparing a determined value of the data frame with the predetermined fixed pattern. The data frame may include a preceding data field in which a message is stored and a subsequent comma field having the same bit value as the fixed pattern.

Equalizers, communication systems and operating methods thereof

An electronic device may include a reception circuit configured to generate a plurality of reception data bits based on a voltage level of an analog signal received through a link, and to generate a plurality of bit reliability values indicating probabilities of error occurrence of the plurality of reception data bits based on the voltage level of the analog signal, an alignment circuit configured to group the plurality of reception data bits into a plurality of error correction code (ECC) symbols, and to generate a plurality of symbol reliability values indicating probabilities of error occurrence of the plurality of ECC symbols based on the plurality of bit reliability values, and a decoding circuit configured to correct errors of the plurality of ECC symbols based on the plurality of symbol reliability values.

Electronic devices and methods of operating the same

A clock signal delay path unit includes a first delay cell including a first root signal line for delaying and transmitting a clock signal, a first repeater to transmit the clock signal transmitted through the first root signal line without signal attenuation, and a second root signal line for delaying and transmitting the clock signal output from the first repeater, a second delay cell including a first inverting circuit configured to invert the clock signal provided from the first delay cell to generate an inverted clock signal, and a third delay cell including a first branch signal line for delaying and transmitting the inverted clock signal provided from the second delay cell, a second repeater to transmit the inverted clock signal transmitted through the first branch signal line, and a second branch signal line for delaying and transmitting the inverted clock signal output from the second repeater.

Memory device and operating method of a memory device

A nonvolatile memory device may include a variable sampler configured to process a data signal in an amplifier mode or a sampler mode in response to a control signal, a selection circuit configured to transmit the data signal output from the variable sampler to a flip-flop via a delay unit or to the flip-flop via a path that bypasses the delay unit in response to the control signal, a converter configured to amplify a data strobe signal, a clock distribution network configured to transmit the data strobe signal amplified by the converter to the variable sampler or delay the amplified data strobe signal for a predetermined time and transmit the amplified data strobe signal to the flip-flop in response to the control signal, and a path controller configured to generate the control signal according to an input/output mode.

Nonvolatile memory device providing input/output compatibility and method for setting compatibility thereof

A receiver includes a voltage-to-time converter configured to sequentially output a first converted signal and a second converted signal based on a first signal, a second signal, and a time difference; a first time comparator configured to determine a first bit value based on a first first-arrival signal (FAS) and output first data including the first bit value; a delay time generator configured to select a non-target signal and a target signal based on the first bit value and from among the first converted signal and the second converted signal; and a second time comparator configured to determine a second bit value based on a second FAS and output second data including the second bit value.

Receiver, operation method thereof, and memory device

An input/output circuit of a nonvolatile memory device and a nonvolatile memory device. The input/output circuit of a nonvolatile memory device includes a driver, which is configured to output data from the nonvolatile memory device to a data line, and a power gating circuit, which is connected between the driver and a power terminal or between the driver and a ground terminal and configured to block a leakage current of the driver. The power gating circuit includes a plurality of transistors electrically connected in parallel and having threshold voltages of different magnitudes, respectively.

Nonvolatile memory device including power gating circuit and input/output circuit of a nonvolatile memory device

There is provided a semiconductor device, which includes a calibration code generator circuit configured to generate a calibration code according to changes in external conditions, a first driver circuit configured to output a data signal with an impedance value controlled by the calibration code, an emphasis control circuit configured to generate an emphasis data signal using the data signal, and to change the calibration code according to an operating frequency to generate an emphasis code; and a second driver circuit configured to output the emphasis data signal with an impedance value controlled by the emphasis code.

Semiconductor device and method for preforming emphasis driving

Disclosed is a method of operating an electronic device which communicates with an external electronic device. The method includes loading first user data including at least one first condition bit, first valid bits, and second valid bits, generating first and second intermediate data based on the first user data with reference to a target conversion rule of a conversion table of the electronic device, which corresponds to the at least one first condition bit, a sum of a first power value corresponding to the first intermediate data and a second power value corresponding to the second intermediate data being less than or equal to a power threshold value, generating first symbol data by performing first encoding on the first intermediate data, generating second symbol data by performing second encoding on the second intermediate data, and providing first encoded data including the first symbol data and the second symbol data.

Transmitting circuit providing encoded data, electronic device including the same, and method of operating the electronic device including the same

A device includes a receiver configured to receive a plurality of Error Correction Code (ECC) codewords transmitted from an external device through a channel including one or more lanes; an ECC decoder configured to generate a plurality of post ECC codewords by performing error correction with respect to the plurality of ECC codewords and generating a first cyclic redundancy check (CRC) codeword based on the plurality of post ECC codewords; a CRC checker configured to determine whether an error exists in the first CRC codeword; and a post ECC decoder configured to, when it is determined that the error exists in the first CRC codeword, generate a second CRC codeword by estimating a remaining error position based on error correction result information received from the ECC decoder and performing remaining error correction with respect to the plurality of post ECC codewords based on the remaining error position.

Error correction device and error correction method

A memory system including: a memory controller to transmit a command, an address, or data to a first channel based on a data input/output signal having one of N (N is a natural number of three or more) different voltage levels during a first time interval, the memory controller transmitting the command, the address, or the data not transmitted during the first time interval to the first channel based on the data input/output signal having one of two different voltage levels during a second time interval; and a memory device to sample the data input/output signal received via the first channel during the first time interval in a pulse amplitude modulation (PAM)-N mode, the memory device sampling the data input/output signal received via the first channel during the second time interval in a non return to zero (NRZ) mode.

Memory device supporting a high-efficient input/output interface and a memory system including the memory device

An amplifier circuit comprises a first unit circuit and a second unit circuit. The first unit circuit may include a first current mirror circuit that includes a first active inductor including a P-channel transistor, and a first input circuit configured to generate a first differential current and a second differential current based on a pair of differential input signals. The second unit circuit may include a second current mirror circuit that includes a second active inductor including a P-channel transistor, and a second input circuit configured to generate a third differential current and a fourth differential current based on the pair of differential input signals.

Operational transconductance amplifier circuit including active inductor

A semiconductor device has a memory controller configured to provide a data strobe signal, and a memory device configured to receive a data signal provided from the memory controller or output a data signal to the memory controller, wherein the memory device includes a memory interface including a plurality of DQ driving circuits, the memory interface being configured to generate a plurality of phase clock signals based on the data strobe signal, determine a number of phase clock signals provided to the plurality of DQ driving circuits based on an operating frequency of the memory device, and provide the determined number of phase clock signals to the plurality of DQ driving circuits.

Memory interface and semiconductor memory device and semiconductor device including the same

In a method of generating a multi-level signal having one of three or more voltage levels that are different from one another, input data including two or more bits is received. A drive strength of at least one of two or more driving paths is changed based on the two or more bits such that a first transition time, during which an output data signal is transitioned from a first voltage level to a second voltage level, is changed. The output data signal that is the multi-level signal is generated such that the first transition time of the output data signal is changed and a second transition time, during which the output data signal is transitioned from the first voltage level to a third voltage level different from the second voltage level, is maintained.

Method of generating a multi-level signal using selective equalization, method of transmitting data using the same, and transmitter and memory system performing the same

Encoding and decoding apparatuses and methods for implementing multi-mode coding are provided. The apparatus includes a transmitter and a receiver connected to a data bus. When data bursts are converted by the transmitter into codewords each including a plurality of symbols and/or a codeword received by the receiver is recovered as data bursts, maximum transition avoidance (MTA) codeword mappings in which no maximum transition (MT) event occurs between the plurality of symbols and minimum DC current (MDC) codeword mappings related to minimum power consumption of the plurality of symbols are used.

Encoding and decoding apparatuses and methods for implementing multi-mode coding

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Seoul, South Korea

Youngdon Choi