Gwangju Institute of Science and Technology

Youngchul Leem

Seong-Ju Park

Jae-Joon Kim

A light emitting diode including a magnetic structure and a method of fabricating the same are disclosed. The magnetic structure composed of passivation layers and a magnetic layer is disposed inside a luminous structure composed of an active layer and a semiconductor layer. In the light emitting diode, the magnetic structure including the magnetic layer is disposed on a side surface of the active layer to improve recombination rate of charge carriers for light emission by increasing influence of a magnetic field applied to the active layer. In addition, the light emitting diode according to the present invention allows change in position of the magnetic structure including the magnetic layer depending upon an etched shape of the luminous structure, thereby realizing various magnetic field distributions.

Light emitting diode having magnetic structure and method of fabricating the same

Disclosed herein is a light emitting diode. The light emitting diode includes a substrate, an n-type semiconductor layer placed on the substrate, an active layer placed on the n-type semiconductor layer, a p-type semiconductor layer placed on the active layer, a reflective layer placed on the p-type semiconductor layer, an n-type electrode electrically connected to the n-type semiconductor layer, a p-type electrode placed on the reflective layer; and a first patterned magnetic structure placed on the reflective layer, and separated from the p-type electrode. The light emitting diode can provide improved internal quantum efficiency using the patterned magnetic structure.

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Gwangju, South Korea

Youngchul Leem