Asm IP Holding B.v.

YoungChol Byun

Eric James Shero

Shankar Swaminathan

Bed Prasad Sharma

Fu Tang

Eric Jen Cheng Liu

Peijun Chen

Xingye Wang

A method of forming a doped silicon nitride film on a surface of a substrate and structures including the doped silicon nitride film are disclosed. Exemplary methods include forming a layer comprising silicon nitride using a first thermal process and forming a layer comprising doped silicon nitride using a second thermal process to thereby form the doped silicon nitride film.

Methods and systems for forming doped silicon nitride films

A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.

Structure including SiOCN layer and method of forming same

A method for forming a layer comprising SiOC on a substrate is disclosed. An exemplary method includes selectively depositing a layer comprising silicon nitride on the first material relative to the second material and depositing the layer comprising SiOC overlying the layer comprising silicon nitride.

Structure including SiOC layer and method of forming same

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Tempe, AZ, United States of America

YoungChol Byun