Samsung Electronics Co., Ltd.

Youngchai Jung

Mingyu Kim

Munhyeon Kim

Seon-Bae Kim

Yeonho Park

A semiconductor device includes a substrate with an active region being provided with a channel pattern, a device isolation layer including a first part defining the active region and a second part surrounding a first portion of the channel pattern, an upper epitaxial pattern disposed on an upper surface of the channel pattern, a gate electrode surrounding a second portion of the channel pattern and extending in a first direction, a gate spacer on the gate electrode, an interlayer dielectric layer on the gate spacer, and an air gap between a bottom surface of the gate electrode and the second part of the device isolation layer. At least a portion of the air gap vertically overlaps the gate electrode. The second portion of the channel pattern is higher than the first portion of the channel pattern.

Growing community of inventors

Anyang-si, South Korea

Youngchai Jung