Samsung Electronics Co., Ltd.

Graphene Square Inc.

Hanwha Techwin Co., Ltd.

Youngbin Lee

Yeonkyu Choi

Young Ju Kim

Byung Hee Hong

Kyungryun Kim

Jinhoon Jang

Jin-Hoon Jang

Su Kang Bae

Kiho Kim

Seung-Jun Lee

Sang Jin Kim

Seung-jun Lee

Jaehyoung Choi

Hyeong Keun Kim

Doohee Hwang

Gukhyon Yon

Soojin Hong

Cheoljin Cho

Jong-hyun Ahn

Jonghyun Ahn

Gabjin Nam

Myung Hee Jung

Ji Beom Yoo

Houk Jang

Junha Hwang

Disclosed is an operating method of a memory device communicating with a memory controller, which includes receiving a first command from the memory controller, the first command indicating initiation of synchronization of a data clock signal and defining a clock section corresponding to the synchronization, preparing a toggling of the data clock signal during a preparation time period, processing a first data stream based on the data clock signal toggling at a reference frequency, and processing a second data stream based on the data clock toggling at the reference frequency and extended for a period of the defined first clock section.

Operating method of memory device for extending synchronization of data clock signal, and operating method of electronic device including the same

Provided is a method of fabricating a capacitor. The method of fabricating a capacitor may include forming a first electrode, forming a dielectric layer on the first electrode, forming a second electrode on the dielectric layer, and applying, between the first electrode and the second electrode, a voltage outside an operating voltage range applied during operation or a current outside an operating current range applied during operation.

Methods of fabricating capacitor and semiconductor device including the capacitor

Provided are an apparatus, a memory device, and a method for storing a plurality of parameter codes for an operation parameter. The memory device includes a mode register and a control logic circuit. To set a first operating condition and a second operating condition for one operation parameter, the mode register stores a first parameter code for the operation parameter and a second parameter code, which is expressed as an offset value from the first parameter code. The control logic circuit sets the first operating condition as a current operating condition of the memory device by using the first parameter code based on a first control code and sets the second operating condition as the current operating condition of the memory device by using the first parameter code and the second parameter code based on a second control code.

Apparatus, memory device, and method for storing multiple parameter codes for operation parameters

The present invention relates to a method for forming a graphene protective film having gas and moisture barrier properties, to a graphene protective film formed by the method, and to the use thereof. A single-layer or multilayer graphene protective film can be used as a material for a barrier coating or bags, and improves the gas and moisture barrier properties of a variety of devices in a wide array of industrial fields to thereby maintain the electrical characteristics of devices over a long period of time.

Graphene protective film serving as a gas and moisture barrier, method for forming same, and use thereof

A complementary metal-oxide semiconductor (CMOS) image sensor includes a device isolation layer provided in a trench of a substrate, the device isolation layer defining a pixel; and a photoelectric conversion device provided in the pixel. The device isolation layer includes a conductive layer, a tunneling layer interposed between the conductive layer and the substrate, and a trap layer interposed between the tunneling layer and the conductive layer.

CMOS image sensor

The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500&#xb0; C. or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).

Method for producing graphene at a low temperature, method for direct transfer of graphene using same, and graphene sheet

Growing community of inventors

Suwon-si, South Korea

Youngbin Lee