Samsung Corning Precision Materials Co., Ltd.

Corning Precision Materials Co., Ltd.

Young Zo Yoo

Joo Young Lee

Kyungwook Park

Seo Hyun Kim

Gun Sang Yoon

Eun Ho Choi

Il Hee Baek

Sang Jun Yim

SooHo Park

Myong Woon Kim

Sang Ick Lee

Sang Do Lee

Hyung Soo Shin

Seung Ho Yoo

Yoon Young Kwon

Jun Sung Choi

Hyunhee Lee

SeoHyun Kim

June Hyong Park

Hyun Min Shin

Jeong Woo Park

Jeong Yeong Park

GunSang Yoon

Jeongwoo Park

Taejung Park

Eun-Ho Choi

Bogyeong Kim

June Hyoung Park

JongSe Park

Tae Jung Park

Yoonyoung Kwon

Junehyoung Park

A light extraction substrate for an organic light-emitting device (OLED) which can improve the brightness of a display or an illumination system to which an OLED is applied by improving light extraction efficiency and a method of manufacturing the same. The light extraction substrate for an OLED includes an oxide or nitride thin film formed on a substrate body. The oxide or nitride thin film includes a base layer formed on the substrate body, a first texture formed on the base layer, the first texture having a plurality of first protrusions which protrude continuously or discontinuously from the base layer, and a second texture having a plurality of second protrusions which protrude continuously or discontinuously from each outer surface of the first protrusions.

Light extraction substrate for OLED and method of fabricating the same

A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent.

Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same

A metal oxide thin film substrate for an organic light-emitting device (OLED) which exhibits superior light extraction efficiency and can be easily fabricated at low cost and a method of fabricating the same and a method of fabricating the same. The metal oxide thin film substrate for an OLED includes a base substrate and a metal oxide thin film formed on the base substrate, the metal oxide thin film being made of a mixture of at least two metal oxides having different refractive indices.

Metal oxide thin film substrate for OLED and method of fabricating the same

A method of fabricating a patterned substrate, with which the optical performance of a photovoltaic cell including an organic solar cell and an organic light-emitting diode (OLED) can be improved. The method includes generating electrostatic force on a surface of a substrate by treating the substrate with electrolytes, causing nano-particles to be adsorbed on the surface of the substrate, etching the surface of the substrate using the nano-particles as an etching mask, and removing the nano-particles residing on the surface of the substrate.

Method of fabricating patterned substrate

A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains an alkyl zinc halide having the following formula: R&#x2014;Zn&#x2014;X, where R is an alkyl group CH, and X is a halogen group. The n is a number ranging from 1 to 4, and the alkyl group is one selected from among a methyl group, an ethyl group, an i-propyl group and a t-butyl group. The halogen group contains one selected from among F, Br, Cl and I. A method of depositing a zinc oxide-based thin film includes loading a substrate into a deposition chamber; and supplying the zinc oxide precursor which contains the above-described alkyl zinc halide and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. The zinc oxide-based thin film is deposited on the substrate via atmospheric pressure chemical vapor deposition.

Zinc oxide precursor containing alkyl zinc halide and method of depositing zinc oxide-based thin film using the same

There is provided a compound semiconductor substrate prepared by forming a point defect in an inside structure thereof by implanting an electrically-neutral impurity with energy of 0.1 to 10 MeV on a surface of the substrate. When the compound semiconductor is undoped, electrical resistance increases to increase insulating properties, and when the compound semiconductor is doped with an n-type dopant, the impurity is implanted and charge concentration of the substrate increases to increase conductive properties. In accordance with the present invention, the various electrical properties needed for the compound semiconductor can be effectively controlled by increasing the insulating properties of the undoped compound semiconductor or by increasing the charge concentration of the n-type compound semiconductor, and the application range to various devices can be expanded.

Compound semiconductor substrate and control for electrical property thereof

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Chungcheongnam-do, South Korea

Young Zo Yoo