Skhynix Inc.

Postech Academy-industry Foundation

Young Woong Do

Hae Wook Han

Won Jun Lee

Jong Hwan Kim

Chul Woo Kim

Su Hwan Lim

Yun Hui Yang

Kyoung In Lee

Ki Won Moon

Do Hwan Kim

Won Jin Kim

Sang Dong Yoo

Moung Seok Baek

Ju Sang Lee

Cha Young Lee

Seong Hoe Jeong

Sung Jun Park

An image sensing device and a method for forming the same are disclosed. The image sensing device includes a substrate including photoelectric conversion elements, and a grid structure disposed over the substrate. The grid structure includes an inner grid layer, and an outer grid layer formed outside the inner grid layer to provide air layer formed at a side surface and a top surface of the inner grid layer.

Image sensing device and method for forming the same

An image sensing device includes a first pixel configured to generate an electrical signal in response to incident light and including a first optical filter configured to transmit the incident light corresponding to a first color; and a second pixel configured to generate another electrical signal in response to the incident light and including a second optical filter configured to transmit the incident light corresponding to the first color, wherein a thickness of the first optical filter is larger than a thickness of the second optical filter.

Image sensing device including various optical filters

An image sensor is provided to include: one or more first grid structures arranged in rows and columns of a pixel array including imaging pixels arranged in rows and columns, the first grid structures structured to separate the imaging pixels from one another and including a low refractive-index material or an air to provide an optical isolation between two adjacent imaging pixels; and a gap region disposed between the first grid structures and configured to physically isolate the first grid structures from each other, wherein the first grid structures comprise a first capping layer covering the low refractive-index material or the air.

Image sensor

An image sensing device including optical filters adjacent to each other is disclosed. The image sensing device includes a substrate including first and second photoelectric conversion elements configured to generate photocharges corresponding to an intensity of incident light corresponding to a first color; a first pixel including a first optical filter disposed over the first photoelectric conversion element to selectively transmit the light corresponding to the first color; a second pixel including a second optical filter disposed over the second photoelectric conversion element to selectively transmit the light corresponding to the first color; and a first air layer disposed between the first optical filter and the first photoelectric conversion element to reflect light from the first optical filter.

Image sensing device for sensing high dynamic range images including air layer

An image sensing device includes a substrate layer structured to include photoelectric conversion elements, grid structures disposed over the substrate layer to divide space above the substrate into different sensing regions, and color filter layers disposed over the photoelectric conversion elements between the grid structures. The grid structures includes an air layer, a light guide layer disposed over the air layer, and a capping film configured to cover the air layer and the light guide layer.

Image sensing device

An image sensing device and a method for forming the same are disclosed. The image sensing device includes a substrate including one or more photoelectric conversion elements, and a grid structure disposed over the substrate. The grid structure includes an air layer, a support film formed over the air layer, and a capping film formed at side surfaces of the air layer and the support film and at a top surface of the support film.

An image sensor may include: a photoelectric conversion layer suitable for converting light into an electrical signal; a spacer layer formed over the photoelectric conversion layer, and suitable for preventing light reflection while adjusting a focus; and a first condensing layer formed at the inner bottom of the spacer layer, and suitable for condensing incident light.

Image sensor with inner light-condensing scheme

An image sensor includes a color filter configured to pass a specific color of light; a micro lens formed under the color filter and configured with a plurality of layers in which an upper layer has a smaller area than a lower layer; and a photo device formed under the micro lens and configured to receive light passing through the micro lens and convert the received light into an electrical signal.

Image sensor with micro lens including a plurality of layers each of different thickness

The present invention is provided to remove scattering from other parts, except for an end part of a nano-probe, in a near-field microscope, and to enable a spectral analysis by delaying the generation of multiple reflections caused through the shaft of the nano-probe. A first characteristic of the present invention is to temporally delay generation of multiple reflections by manufacturing a probe portion to have a predetermined length or more in a tuning-fork based near-field probe. A second characteristic of the present invention is to provide a near-field microscope which includes a tuning-fork based near-field probe having a structure as above, and can measure a time-domain transient reaction of a scattered wave. A third characteristic of the present invention is to provide a method for performing a spectral analysis on a time-domain signal measured by the near-field microscope.

Tuning-fork based near field probe for spectral measurement, near-field microscope using the same, and spectral analysis method using near-field microscope

A CMOS image sensor includes an active pixel structure suitable for sensing light incident from outside and converting a sensed light into an electrical signal, and an optical block structure suitable for blocking a visible light and passing a UV light to check and evaluate an electrical characteristic of the active pixel area. The UV pass filter includes first and second insulation layers comprising an insulator, and a metal layer formed between the first and second insulation layers.

Growing community of inventors

Icheon-si, South Korea

Young Woong Do