Samsung Electronics Co., Ltd.

Hyundai Motor Company

Kia Motors Corporation

Other

Young Woo Jung

Jung Chak Ahn

Hwan-Chung Kim

Kyung Ho Lee

Jinwoo Jung

Bong-Gwan Seol

Kyoungkuy Park

Eunju Park

Hyun-Ju Kim

Seung Joo Nah

Hee Tak Shin

Young Chan Kim

Ki Chang Kim

Sung Chul Park

Jung Jae Lee

Ho Chul Hwang

Hyuk Soon Choi

Wan-Soo Choi

Jeong Kyu Park

Young Seok Park

Jun Suk Lee

Chang Hwan Ye

Heetak Shin

Hyung Seuk Oh

Won Geun Shim

Jonghwan Lee

Taekkyun Lee

Seo Yeon Park

Byung Gon Han

Jeong Gyu Jin

Jeonghoon Cho

Sung Il Jo

Hae-Sung Bae

Hae Yong Park

Yu Han Kim

Soon Oh Kwon

Sung Woo Jo

Disclosed are a method of improving fuel efficiency of a fuel cell electric vehicle, and an apparatus and a system therefor. The method includes collecting navigation information and vehicle speed information, calculating a coasting line when a specified event point is detected based on the navigation information, determining whether deceleration is necessary by comparing a current traveling speed with a coasting line speed corresponding to a current location, and changing a criterion for determining whether to enter a fuel cell stop (FC STOP) state when the deceleration is necessary as a determination result.

Method of improving fuel efficiency of fuel cell electric vehicle by using navigation information, and apparatus and system therefor

The present disclosure relates to a control method for a fuel cell. The control method includes: collecting, by a controller, state information of a fuel cell (FC) stack; determining, by the controller, a degradation state of the FC stack from the collected state information of the FC stack; correcting, by the controller, a basic threshold output corresponding to a present driving state of a vehicle on the basis of information of the determined degradation state of the FC stack; comparing, by the controller, a post-correction threshold output that is obtained by correcting the basic threshold output and a motor demand output, and determining, by the controller, stopping or restarting of a fuel cell; and controlling, by the controller, such that the determined stopping or restarting state of the fuel cell is achieved.

Control method for fuel cell

Image sensors and image processing devices including the image sensors are provided. The image sensors may include a semiconductor substrate including a plurality of pixel areas, a photodiode provided in the semiconductor substrate in one of the plurality of pixel areas and a transfer transistor having a transfer gate electrode. A portion of the transfer gate electrode may be in the semiconductor substrate and may extend toward the photodiode. The image sensors may also include a floating diffusion configured to accumulate charges transferred from the photodiode by the transfer transistor, and the floating diffusion may include a first area and a second area disposed on different sides of the transfer gate electrode.

Image sensors and image processing devices including the same

A hydrogen filling method for a fuel cell vehicle includes filling a hydrogen tank of the fuel cell vehicle with hydrogen using a hydrogen dispenser by sequentially using a low-pressure storage tank of the fuel cell vehicle, a medium-pressure storage tank of the fuel cell vehicle, and a high-pressure storage tank of the fuel cell vehicle.

Hydrogen filling method for fuel cell vehicle

Disclosed is an electronic device includes a flexible display, a support structure that supports the flexible display and a housing, into which the flexible display and the support structure are inserted. When the support structure is inserted into the housing, the flexible display is inserted into the housing together with the support structure while being wound in a specific direction. When the support structure extends outside the housing, the flexible display is deployed so that the flexible display is substantially flat.

Electronic device including flexible display

A unit pixel of an image sensor which operates in global shutter mode is provided. The unit pixel includes a photo diode area including a photo diode configured to accumulate photocharges generated from incident light during a first period and a storage diode area including a storage diode configured to receive and store the photocharges from the photo diode. The photo diode corresponds to a micro lens that focuses the incident light.

Unit pixels, image sensors including the same, and image processing systems including the same

Pixels of image sensors are provided. The pixels may include a photo diode configured to accumulate photocharges generated therein corresponding to incident light during a first period, a storage diode configured to store photocharges accumulated in the photo diode and a storage gate configured to control transfer of the photocharges accumulated in the photo diode to the storage diode. The storage gate may include a vertical gate structure extending toward the photo diode.

Pixels of image sensors, image sensors including the pixels, and image processing systems including the image sensors

An operating method of a storage device which includes a nonvolatile memory and a memory controller configured to control the nonvolatile memory, may include tracking a clock signal; entering a vendor mode of the storage device when the clock signal corresponds to a vendor pattern; and maintaining a normal mode of the storage device when the clock signal does not correspond to the vendor pattern, wherein, in the normal mode, a command received from an external host device is executed according to a first rule, and wherein, in the vendor mode, the command received from the external host device is executed according to a second rule different from the first rule.

Storage device and operating method of storage device

A pixel for a backside illuminated (BSI) image sensor includes a semiconductor substrate having a first surface and a second surface, a photoelectric conversion region between the first surface and the second surface to generate charges in response to light received through the second surface, first trench-type isolation region surrounding the photoelectric conversion region and extending vertically from the second surface, a floating diffusion region in the semiconductor substrate below the photoelectric conversion region, and a transfer gate extending vertically from the first surface towards the photoelectric conversion region to transfer the charges from the photoelectric conversion region to the floating diffusion region. The first trench-type isolation region is formed of a negative charge material.

Pixel, image sensor including the same, and portable electronic device including the image sensor

A nonvolatile memory system includes a memory controller and a nonvolatile memory. A method of operating the nonvolatile memory system includes receiving a command that includes an urgency level from an external device, adjusting an operation time of an operation of the command based on the urgency level, completing the operation of the command within the adjusted operation time, and transmitting a completion response to the external device.

Operation method of nonvolatile memory system and operation method of user system including the same

A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.

Memory system and read reclaim method thereof

A memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes first memory blocks configured to store m-bit data per cell and second memory blocks configured to store n-bit data per cell. The memory controller is configured to control the nonvolatile memory device to close an open word line generated in a second memory block of the second memory blocks when a program operation is performed on the second memory block.

Nonvolatile memory device and method of programming nonvolatile memory device

A storage device is provided which includes a plurality of memory chips each nonvolatile memory cells divided into a first memory region and a second memory region; and a memory controller configured to buffer data provided from the exterior and to control the plurality of memory chips to perform a buffer-program operation and a main-program operation. The buffered data is stored at the first memory region at the buffer-program operation and data stored at the first memory region is written at the second memory region at the main-program operation. During a main-program operation of a first memory chip among the plurality of memory chips, the memory controller buffers data to be written at a second memory chip.

Data storage device comprising nonvolatile memory chips and control method thereof

Growing community of inventors

Osan-si, South Korea

Young Woo Jung