Samsung Electronics Co., Ltd.

Soulbrain Co., Ltd.

Dongwoo Fine-Chem Co., Ltd.

Young-taek Hong

Hoon Hee Han

Kyounghwan Kim

Kyunghyun Kim

Yongsun Ko

Jihoon Jeong

Daehong Eom

Sang Won Bae

Se-Ho Cha

Jinuk Lee

Jaewan Park

ChangSup Mun

Junghun Lim

Seonghwan Park

Byoungmoon Yoon

Chanjin Jeong

Yanghwa Lee

Sung-bae Kim

Ho-Young Kim

Sang-tae Kim

Dong-Min Kang

Byoung-Moon Yoon

Baik-soon Choi

Jae-Wan Park

Jin-Uk Lee

Jun-Youl Yang

Sue-ryeon Kim

Young-Ok Kim

Kyong-ho Lee

Seong-min Kim

Jung-hun Lim

Hyo-Sun Lee

Tae-Heon Kim

Keon-Young Kim

In-goo Kang

Sun-Joong Song

Hong-kwon Youn

Hyung-pyo Hong

Compositions for removing silicone resins and methods of thinning a substrate by using the same, as well as related methods, apparatus and systems for facilitating the removal of silicone resins are provided. The compositions for removing silicone resins, may include a heterocyclic solvent and an alkyl ammonium fluoride salt represented by a formula, (R)NF, wherein R is a C1 to C4 linear alkyl group. Silicone resins may be effectively removed by using the compositions since the compositions exhibit an excellent decomposition rate with respect to the silicone resins that remain on a semiconductor substrate in a process of backside grinding of the semiconductor substrate, backside electrode formation, or the like.

Composition for removing silicone resins and method of thinning substrate by using the same

The present disclosure herein relates to methods of forming conductive patterns and to methods of manufacturing semiconductor devices using the same. In some embodiments, a method of forming a conductive pattern includes forming a first conductive layer and a second conductive layer on a substrate. The first conductive layer and the second conductive layer may include a metal nitride and a metal, respectively. The first conductive layer and the second conductive layer may be etched using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and a remainder of water. The etchant composition may have substantially the same etching rate for the metal nitride and the metal.

Methods of forming conductive patterns and methods of manufacturing semiconductor devices using the same using an etchant composition that includes phosphoric acid, nitric acid, and an assistant oxidant

In a method of manufacturing an integrated circuit (IC) device, a photomask is wet-processed using a cleaning composition comprising an organic acid, an oxidizing agent, and deionized water (DIW).

Methods of manufacturing integrated circuit devices by using photomask cleaning compositions

Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Compositions for etching

Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Compositions for etching and methods of forming a semiconductor device using the same

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Hwaseong-si, South Korea

Young-taek Hong