Korea Institute of Science and Technology

Young Tae Byun

Seok Pil Lee

Deok Ha Woo

Young Min Jhon

Sun Ho Kim

Jae Hun Kim

Taikjin Lee

Min Ah Seo

Taik Jin Lee

Jong Chang Yi

Joon Kui Ahn

Yong Soo Kim

Chulki Kim

Min Chul Park

Chul Ki Kim

Young In Jhon

Chi Woong Jang

Hyoung-Juhn Kim

Dong Jin Lee

Dong Hwan Kim

Sang Wook Han

Yong Kim

Minah Seo

Myung-Suk Chun

Seong Chan Jun

Yu Kyeong Kim

Sang Hyuck Kim

Hwa Sun Park

Byunghyuck Moon

Kwang Nam Kang

Myung Suk Chun

Min-Chul Park

Young Mo Jung

Sun-woo Choi

Eun Gyeong Kim

Seungwoo Jeon

Kayoung Kim

Joon Mo Ahn

Jae Seong Kim

Kwang Nam Kim

Kyeong Heon Kim

Yeong Jun Kim

Kwang Seok Kim

Shin Geun Kim

One aspect of the present disclosure is a method for selective surface functionalization using a single-photon source. The method for selective functionalization using a single-photon source includes: (a) adding a single-photon source to a solution containing a photosensitizer and a monomer; and (b) emitting a single photon from the single-photon source. One aspect of the present disclosure is a selectively functionalized single-photon source prepared by the method.

Method for surface functionalization using single photon source

A sensing material for gas sensors including carbon nanotubes in which lanthanum fluoride (LaF) nanoparticles are fixed, a method of fabricating the sensing material, a gas sensor including the sensing material, and a method of fabricating the gas sensor are provided. The gas sensor having an excellent response and excellent selectivity to Fgas without any electrolytes may be provided using the sensing material. Also, the gas sensor can be useful in measuring a concentration of the Fgas and minimizing power consumption because the gas sensor may be operated at room temperature without using a heater, and can be used for portable purposes because it is possible to miniaturize the gas sensor.

Sensing material for gas sensors, method of fabricating the sensing material, gas sensor including the sensing material and method of fabricating the gas sensor

Provided are a saturable absorber including at least one material selected from a group of MXenes, and a Q-switching and mode-locked pulsed laser system using the same.

Saturable-absorber-based laser system

Provided are a method of fabricating a 3-dimensional transistor sensor and the sensor and a sensor array thereof. The method of fabricating the 3-dimensional transistor sensor includes forming an insulating layer on a silicon substrate, forming a silicon layer on the insulating layer and forming a 3-dimensional silicon fin by etching the silicon layer, forming a source area and a source electrode at one end of the silicon fin, forming a drain area and a drain electrode at the other end the silicon fin, and forming a gate area at a center of the silicon fin, surrounding three surfaces of a gate with a gate insulating layer, forming a sensing gate layer configured to surround a portion of the gate insulating layer, and sealing an upper portion of the gate insulating layer excluding the sensing gate layer.

Method of fabricating 3-dimensional transistor sensor, the sensor and sensor array thereof

Provided is an extreme ultra-violet (EUV) beam generation apparatus using multi-gas cell modules in which a gas is prevented from directly flowing into a vacuum chamber by adding an auxiliary gas cell serving as a buffer chamber to a main gas cell, a diffusion rate of the gas is decreased, a high vacuum state is maintained, and a higher power EUV beam is continuously generated.

Apparatus for generating extreme ultra-violet beam using multi-gas cell modules

A method for forming a PN junction in graphene includes: forming a graphene layer, and forming a DNA molecule layer on a partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the graphene layer with a predetermined doping property upon adsorption on the graphene layer. The DNA molecule has a nucleotide sequence structure designed for doping of graphene so that doped graphene has a specific semiconductor property. The DNA molecule is coated on the surface of the graphene layer of which the partial region is exposed by micro patterning, and thereby, PN junctions of various structures may be formed by a region coated with the DNA molecule and a non-coated region in the graphene layer.

Method for forming PN junction in graphene with application of DNA and PN junction structure formed using the same

Provided is a method of analyzing binding efficiency of adhesive nanoparticles. The method includes (a) injecting a solution containing nanoparticles into a first chamber slide, (b) evaporating only the solution from the first chamber slide into which the solution containing the nanoparticles is injected, and measuring a saturation temperature using a thermal imager while radiating light from a light source, (c) injecting cells into a second chamber slide, (d) injecting a solution containing nanoparticles into the second chamber slide in which the cells are cultured, (e) removing nanoparticles which are not bound to the cells from the second chamber slide into which the cells and the nanoparticles are injected, and (f) evaporating only the solution from the second chamber slide from which the nanoparticles are removed, and measuring a saturation temperature using a thermal image while radiating light from the light source.

Method of analyzing binding efficiency of adhesive nanoparticles

An apparatus for generating pulsatile flows includes a liquid vessel capable of containing a liquid, a plurality of revolving mechanisms associated with each other, and a microchannel supplied with a liquid from the liquid vessel. As the plurality of revolving mechanisms rotate, a periodically changing pressure difference occurs between the liquid vessel and the microchannel, thereby implementing a pulsatile flow having a wave functional form in the microchannel. By applying the hydraulic head difference and controlling revolution of the revolving mechanisms based on Fourier cosine series, a minute and precise pulsatile flow of a wave functional form may be implemented by means of simple configuration and fabrication, which may not easily obtained by a conventional pump.

Apparatus and method for generating wave functional pulsatile microflows by applying Fourier cosine series and hydraulic head difference

Disclosed are herein an apparatus and method for extreme ultraviolet (EUV) spectroscope calibration. The apparatus for EUV spectroscope calibration includes an EUV generating module, an Al filter, a diffraction grating, a CCD camera, a spectrum conversion module, and a control module that compares a wavelength value corresponding to a maximum peak among peaks of the spectrum depending on the order of the EUV light converted from the spectrum conversion module with a predetermined reference wavelength value depending on an order of high-order harmonics to calculate a difference value with the closest reference wavelength value, and controls the spectrum depending on the order of the EUV light converted from the spectrum conversion module to be moved in a direction of wavelength axis by the calculated difference value. Thus, it is possible to accurately measure a wavelength of a spectrum of EUV light used in EUV exposure technology and mask inspection technology.

Apparatus and method for extreme ultraviolet spectrometer calibration

Provided is a pulse laser apparatus for generating laser light. The apparatus includes a first mirror and a second mirror which are disposed at both ends of a resonator and configured to reflect the laser light, a gain medium disposed between the first and second mirrors and configured to amplify and output light incident from an outside, an etalon configured to adjust a pulse width of the laser light, and an acousto-optic modulator disposed between the first and second mirrors and configured to form a mode-locked and Q-switched signal from the laser light, in which some of the laser light is output through either the first or second mirror to outside the resonator.

Pulse laser apparatus

There are provided a fabricating method of a carbon nanotube-based field effect transistor having an improved binding force with a substrate and a carbon nanotube-based field effect transistor fabricated by the fabricating method. The method includes forming an oxide film on a substrate, forming a photoresist pattern on the oxide film, forming a metal film on the entire surface of the oxide film having the photoresist pattern, removing the photoresist by lifting off, adsorbing carbon nanotubes on the substrate from which the photoresist is removed, performing an annealing process to the substrate to which the carbon nanotubes are adsorbed, and removing the metal film. Since an adhesive strength between a substrate and carbon nanotubes increases, stability and reliability of a field effect transistor can be improved. If the field effect transistor is applied to a liquid sensor or the like, a lifespan of the sensor can be extended and reliability of a measurement result obtained by the sensor can be improved.

Fabricating method of carbon nanotube-based field effect transistor and carbon nanotube-based field effect transistor fabricated thereby

Provided are a method of controlling an amount of adsorbed carbon nanotubes (CNTs) and a method of fabricating a CNT device. The method of controlling an amount of adsorbed CNTs includes adsorbing CNT particles onto a semiconductor structure, and removing some of the adsorbed CNTs by performing an oxygen plasma treatment on the adsorbed CNT particles.

Method of controlling amount of adsorbed carbon nanotubes and method of fabricating carbon nanotube device

The present invention relates to a terahertz wave generator and a method of generating high-power terahertz waves using the terahertz wave generator. The terahertz wave generator includes a hollow spherical body, and a focusing lens installed in a cutout portion of the spherical body or an opening formed in the cutout portion, wherein an inner surface of the spherical body is coated with metal. In the method, frequencies having different levels are incident through the focusing lens or the opening to generate a plurality of air plasmas, and the air plasmas cause continuous focusing the metal-coated inner surface and hollow space of the spherical body, thus generating high-power terahertz waves. According to the present invention, a plurality of air plasmas is continuously generated, thus solving the problem in which the light intensity of terahertz waves generated using one air plasma is low.

Terahertz wave generator and method of generating high-power terahertz waves using the same

Disclosed herein is an apparatus and method for implementing an all-optical OR logic gate. The apparatus includes an optical pulse generator, a Mode-Locked Fiber Laser (MLFL), a first optical splitter, a first optical delay line means, an optical control means, a first optical coupler, a second optical splitter, a second optical delay line means, a third optical splitter, an Erbium Doped Fiber Amplifier (EDFA), a Semiconductor Optical Amplifier (SOA), a second optical coupler, and an optical analyzer. The first optical splitter divides light output from the MLFL. The first and second optical delay line means acquire time delay. The optical control means controls intensity and polarization of the light. The first optical coupler generates the first input signal pattern as a probe signal. The second optical splitter divides light output from the first optical coupler. The third optical splitter divides the second input signal pattern. The EDFA amplifies the divided part of the second input signal pattern as a pump signal. The SOA couples the pump signal with the probe signal in opposite directions to perform the all-optical OR logic operation. The second optical coupler couples a signal output from the SOA with the second input signal pattern.

Embodying equipment and method for an all-optical or logic gate by using single SOA

The present invention relates to an apparatus and a method for realizing all-optical NOR logic device using the gain saturation characteristics of a semiconductor optical amplifier(SOA). More particularly, the invention relates to a 10 Gbit/s all-optical NOR logic device among all-optical logic devices, in which a signal transmitted from a given point of an optical circuit such as an optical computing circuit is used as a pump signal and a probe signal. The method for realizing an all-optical NOR logic device using the gain saturation characteristics of the SOA according to the present invention comprises the steps of: utilizing A+B signal which couples together an input signal pattern A () and an input signal pattern B () as a pump signal (); utilizing a probe signal () by generating a clock signal out of said input signal pattern A (); and obtaining a Boolean equation {overscore (A+B)} by making said probe signal and said pump signal incident upon the SOA simultaneously from the opposite direction. The all-optical logic device according to the present invention has a simple construction since it is realized through the XGM (Cross Gain Modulation) method which utilizes the gain saturation characteristics. Also, it is expected that the method employed in the present invention could be used for realizing other all-optical logic circuits and devices.

Apparatus and method for realizing all-optical NOR logic device using gain saturation characteristics of a semiconductor optical amplifier

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Guri-si, South Korea

Young Tae Byun