Samsung Electronics Co., Ltd.

Young-Sun Song

Ho-jung Kim

Sang-beom Kang

Il-Han Park

Eung-Suk Lee

A semiconductor memory device configured to apply a temperature-compensated word line voltage to a word line during a data read operation includes a memory cell array including a plurality of word lines, a plurality of non-volatile memory cells connected to the word lines, and a word line voltage application unit configured to apply a temperature-compensated read voltage to a selected word line and to apply a temperature-compensated pass voltage to at least one unselected word line during a read operation.

Semiconductor memory device for and method of applying temperature-compensated word line voltage during read operation

A nonvolatile memory device, using a resistance material, includes a memory cell array having nonvolatile memory cells arranged in a matrix, multiple bit lines, a column selection circuit and column drivers. The bit lines are coupled to columns of the nonvolatile memory cells in the memory cell array. The column selection circuit selects at least one bit line in response to column selection signals. Each column driver supplies a column selection signal, and includes a first charge unit that charges an output port of the column driver to a first voltage level in response to a first charge signal, a second charge unit that charges the output port of the column driver to a second voltage level from the first voltage level in response to a second charge signal, and a current controller that controls a current path from the second charge unit to the first charge unit.

Growing community of inventors

Hwaseong-si, South Korea

Young-Sun Song