Samsung Electronics Co., Ltd.

Young-Sun Kim

Sung-Tae Kim

Seung-Hwan Lee

Seok-Jun Won

Han-Mei Choi

Young-Min Kim

Jang-Soo Kim

Woon-Yong Park

Ki-chul Kim

Il-Gon Kim

Yun-Jung Lee

In-Sung Park

Young-Wook Park

Jin-Oh Kwag

Young-Dae Kim

Kyung-hoon Kim

Hyeon-Hwan Kim

Sang-Hyeop Lee

Se-Jin Shim

Jin-Seok Choi

Cheol-Soo Jung

Ho-Joon Lee

Kab-Jin Nam

Ju-Tae Moon

You-Chan Jin

Seog-Chae Lee

Bung-Hyuk Min

Yeong-Hwan Cho

Young-wook Park

Ki-yeon Park

Bong-hwan Cho

Bong-Soon Kang

Sang-in Lee

Chang-soo Park

Jae-Soon Lim

Ki-Vin Im

Wan-don Kim

Jae-Hyun Yeo

Eun-ha Lee

Yeong-kwan Kim

Se-Hoon Oh

Jeong-hee Chung

Sun-Jung Kim

Young-Su Chung

Gab-jin Nam

Doo-Il Hong

Bong-guen Lee

Myung-Kwan Choi

Jong-Sul Min

In one aspect, a memory cell includes a plurality of dielectric layers located within a charge storage gate structure. At least one of the dielectric layers includes an dielectric material including oxygen, and nano regions including oxygen embedded in the dielectric material, where an oxygen concentration of the dielectric material is the greater than an oxygen concentration of the nano regions. In another aspect, at least one of the dielectric layers includes a dielectric material and nano regions embedded in the dielectric material, where an atomic composition of the dielectric material is the same as the atomic composition of the nano regions, and a density of the dielectric material is the greater than a density of the nano regions.

Memory devices comprising nano region embedded dielectric layers

Graphic user interface for dislay on a MP3 player

Generated image for display on a portable telephone

Graphic user interface for a MP3 player

A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line. A redundant repair line overlaps and is insulated from the storage wire at one end and overlaps the storage wire or the gate wire of a neighboring pixel at the other end is formed in the same layer as the data wire. Also, a storage wire connection portion connecting the storage wires of a neighboring pixel is formed in the same layer as the pixel electrode. In this structure, if portions of the gate wire or the data wire are disconnected, the portions overlapping the disconnected wire, the storage wire, and the redundant repair line are shorted to repair an open wire defect.

Thin film transistor array panel

A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and Ogas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.

Method of forming a metal oxide film

A SQRT calculator capable of calculation with a minimal error is provided. The integer calculation unit selects a largest integer from a set of integers with a square of each of the integers smaller than an input datum. The transformation unit transforms the selected integer from the integer calculation unit by multiplying it by 2 and shifts a decimal point of the resulting number to the right by 1 place, thereby adding a certain number less than 10 to the decimal point shifted number to calculate a transformation value. The calculation unit shifts a decimal point of the number less than 10 to the left by 2 places and multiplies the transformation value by the resulting value, thereby subtracting the multiplied value from the input datum and choosing a largest number less than 10 with the subtracted value being in a desired range as a second decimal number of the square root. Thus, the SQRT calculator is capable of calculation with minimal error and, furthermore, has a minimum size of hardware.

SQRT calculator capable of reducing error

A color temperature conversion system and a method thereof are capable of converting the color temperature to the color temperature almost identical with the color temperature obtained by the Robertson algorithm. The color temperature conversion system has an XYZ conversion unit for converting an RGB signal of input video data into an XYZ value in a CIE coordinate system, a chroma calculating unit for calculating X and Y coordinate values of a pixel corresponding to the converted XYZ value, an offset compensate unit for compensating the X coordinate value calculated by the chroma calculating unit based on an X coordinate value difference and a Y coordinate value difference of a color temperature on a white point line of the CIE coordinate system and an actual color temperature of the video data, in the case the color temperature is calculated based on the calculated X coordinate value, a color temperature calculating unit for calculating the color temperature of the video data that is inputted based on the compensated X coordinate value, and a color temperature conversion unit for converting the color temperature calculated by the color temperature calculating unit into a predetermined color temperature and outputting the converted predetermined color temperature.

Color temperature conversion system and method using the same

A false contour correction apparatus and method in an image display system, by which a false contour at a place where conversion of the unit bits of data is severe on a display device driven in a digital system is corrected, is provided. According to the present invention as described above, received image data is displayed by reversely-symmetrically arranging the bits of two digital driving display means, so that fatal false contour during digital driving can be removed.

False contour correction apparatus in image display system and false contour correction method

A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer can be densified. As a result, the electrical characteristics of the semiconductor device are improved. For example, the leakage current characteristics of the dielectric layer are improved and capacitance is increased.

Semiconductor device and method for manufacturing the same

A method for manufacturing a capping layer covering a capacitor of a semiconductor memory device, preferably a metal-insulator-metal (MIM) capacitor, wherein the method includes forming a capacitor having a lower electrode, a dielectric layer and an upper electrode on a semiconductor substrate, forming a capping layer on the capacitor, and crystallizing the dielectric layer. Here, forming the capping layer includes stabilizing for deposition of the capping layer without providing oxygen gas, depositing the capping layer by providing a reaction source for the capping layer; and purging an inside of a reactor for forming the capping layer.

Method for manufacturing a semiconductor device having a capping layer covering a capacitor of the semiconductor device

Methods of forming integrated circuit capacitors include the steps of forming a lower electrode of a capacitor by forming a conductive layer pattern (e.g., silicon layer) on a semiconductor substrate and then forming a hemispherical grain (HSG) silicon surface layer of first conductivity type on the conductive layer pattern. The inclusion of a HSG silicon surface layer on an outer surface of the conductive layer pattern increases the effective surface area of the lower electrode for a given lateral dimension. The HSG silicon surface layer is also preferably sufficiently doped with first conductivity type dopants (e.g., N-type) to minimize the size of any depletion layer which may be formed in the lower electrode when the capacitor is reverse biased and thereby improve the capacitor's characteristic Cmin/Cmax ratio. A diffusion barrier layer (e.g., silicon nitride) is also formed on the lower electrode and then a dielectric layer is formed on the diffusion barrier layer. The diffusion barrier layer is preferably made of a material of sufficient thickness to prevent reaction between the dielectric layer and the lower electrode and also prevent out-diffusion of dopants from the HSG silicon surface layer to the dielectric layer. The dielectric layer is also preferably formed of a material having high dielectric strength to increase capacitance.

Integrated circuit capacitors having doped HSG electrodes

A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and O gas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.

A projection display device adopting two liquid crystal display panels, by which the maximum brightness, which is the same as that in a exemplary case of adopting three liquid crystal display panels, is obtained by using only two liquid crystal display panels, is provided. Accordingly, red, green, blue and white (R&prime;/G&prime;/B&prime;/W) image data, obtained by converting red, green and blue (R/G/B) data using a predetermined algorithm for a four-color sequence system, is displayed via an optical engine having two liquid crystal display panels, with the same brightness as that when data is displayed using three liquid crystal display panels. Hence, the structure of the optical engine can be simplified, and a convergence adjusting point can be reduced.

Projection display device using two liquid crystal display panels

A display device adopting a single liquid crystal display (LCD) panel, by which a decrement in luminance is reduced using only a single liquid crystal device, is provided. Accordingly, a degradation in color saturation due to an increase in luminance caused by the addition of an achromatic color is compensated for by a four-color conversion algorithm, even when an image is displayed using a single LCD panel or a ferroelectric liquid crystal (FLC) panel. Hence, the brightness of a screen increases compared to the prior art, and more distinct colors can be displayed.

Display device using single liquid crystal display panel

Growing community of inventors

Suwon, South Korea

Young-Sun Kim