Skhynix Inc.

Young Suk Seo

Da In Im

Seung Wook Oh

Gyu Tae Park

Ho Uk Song

Tae Jin Kang

Jun Hyun Chun

Sung Hyun Song

Jin Il Chung

A duty correction circuit comprises a first delay circuit, a second delay circuit, a bang-bang driver, a duty detection circuit, and a delay control circuit. The first delay circuit delays an input clock signal to generate a first delayed clock signal. The second delay circuit delays the input clock signal based on a delay control signal to generate a second delayed clock signal. The bang-bang driver generates first and second driving clock signals from the first and second delayed clock signals based on a locking signal and a duty detection signal. The duty detection circuit may detect duty cycles of the first and second driving clock signals and generate the duty detection signal. The delay control circuit may generate the delay control signal and the locking signal based on the duty detection signal.

Duty detection circuit, a duty correction circuit, and a semiconductor apparatus using the duty correction circuit

A delay circuit including a first output clock generation circuit and a second output clock generation circuit. The first output clock generation circuit generates a first output clock signal by mixing phases of a first clock signal and a second clock signal based on an (n+1)-th generated delay control signal. The second output clock generation circuit generates a second output clock signal by mixing the phases of the first and second clock signals based on both an n-th generated delay control signal and the (n+1)-th generated delay control signal.

Clock generation circuit and semiconductor apparatus using the clock generation circuit

A semiconductor apparatus includes a first clock path which generates a first output clock signal by delaying a first phase clock signal, and a second clock path which generates a second output clock signal by delaying a second phase clock signal based on a delay compensation signal. The oscillating path generation circuit forms oscillating paths with the first clock path and the second clock path. The delay information generation circuit generates a delay compensation signal based on oscillating signals generated by forming the oscillating paths.

Semiconductor apparatus including clock paths and semiconductor system including the semiconductor apparatus

A clock generation circuit may include a clock receiver, a first delay loop circuit, and a second delay loop circuit. The clock receiver may receive a first clock signal and a second clock signal and generate a first reception clock signal and a second reception clock signal. The first delay loop circuit may receive the first reception clock signal and the second reception clock signal generate a reference clock signal. The first delay loop circuit may perform a delay-locking operation on the reference clock signal to generate a first delay locked clock signal. The second delay loop circuit may delay the first reception clock signal and the second reception clock signal based on the first delay locked clock signal and an internal clock signal to generate a first internal clock signal.

A skew compensation circuit includes a skew detection circuit configured to generate skew detection signals by detecting a skew characteristic of a basic logic element constituting a semiconductor apparatus, a skew compensation signal generation circuit configured to generate a skew compensation signal by comparing the skew detection signals and a plurality of reference voltages, a variable delay circuit configured to generate a compensation signal by delaying an input signal by a delay time varied according to the skew compensation signal, and a reference voltage generation circuit configured to generate the plurality of reference voltages of which offset components are compensated for according to variations of a temperature and an external voltage.

Skew compensation circuit and semiconductor apparatus including the same

A phase detection circuit is configured to receive an input clock signal and a reference clock signal. The phase detection circuit is configured to generate a divided clock signal from the reference clock signal. The phase detection circuit is configured to generate a phase detection signal after comparing the phase of the input clock signal with the divided clock signal.

Phase detection circuit, and clock generation circuit and semiconductor apparatus including the phase detection circuit

A phase detection circuit includes an edge trigger circuit and a duty detection circuit. The edge trigger circuit generates a reference pulse signal and a comparison pulse signal based on a target clock signal and at least two clock signals having phases adjacent to the phase of the target clock signal. The duty detection circuit generates a phase detection signal by detecting the duty ratio of the reference pulse signal and the comparison pulse signal.

Phase detection circuit, and clock generating circuit and semiconductor apparatus using the phase detection circuit

A semiconductor apparatus includes a clock path, a command path, a delay monitoring circuit, and an output control circuit. The clock path generates a delay clock signal by delaying a clock signal. The command path generates an output command signal from on one of a command signal and the clock signal, based on a monitoring signal. The delay monitoring circuit generates a delay control signal and a latency control signal based on a phase difference between the delay clock signal and the output command signal, when the monitoring signal is enabled. The output control circuit generates an output enable signal by synchronizing the output command signal with the delay clock signal, based on the latency control signal.

Semiconductor apparatus capable of synchronizing command signal and clock signal, and operation method thereof

A semiconductor device may include a first internal command generation circuit configured to advance a phase of a first external command in accordance with a delay time of an on die termination (ODT) path and a first latency and generate the first delay command; and a second internal command generation circuit configured to advance a phase of a second external command in accordance with a delay time of a clock path and a second latency and to generate a second delay command.

Semiconductor device

A semiconductor device may include a first internal command generation circuit, a first DLL circuit, a second internal command generation circuit, and a second DLL circuit. The first internal command generation circuit may generate a first delay command in response to a first external command, a first latency, a first clock, a first delay control signal, and a second clock. The first DLL circuit may generate the first delay control signal and the first second clock in response to the first clock. The second internal command to generation circuit may generate a second delay command in response to a second external command, a second latency, the first clock, a second delay control signal, and a third clock. The second DLL circuit may generate the second delay control signal and the third clock in response to the first clock.

Growing community of inventors

Seoul, South Korea

Young Suk Seo