Samsung Electronics Co., Ltd.

Young Suk Jung

Yoo Seong Yang

Jun Ho Lee

Kyungsang Cho

Seung Yeon Lee

Sang Mo Kim

Bok Soon Kwon

Eun Seog Cho

Tai Gyoo Park

Joo Young Kim

Boun Yoon

Chung Kun Cho

Sangjine Park

Young Hoon Lee

Byung Hee Sohn

Kalinina Fedosya

Don-Wook Lee

Hye Young Kong

Byung-Kwon Cho

Suk Gyu Hahm

Kovalev Mikhail

Ga Hee Kim

Hyun Mi Lee

Jeongman Han

Disclosed are an apparatus for measuring an in-situ crosslink density includes a support configured to fix or support a cross-linkable structure, a light source configured to irradiate light for crosslinking to the cross-linkable structure, and a probe configured to provide in-situ micro-deformation to the cross-linkable structure, wherein the in-situ crosslink density of the cross-linkable structure is measured from a stress-strain phase lag of the cross-linkable structure by the in-situ micro-deformation, a method of measuring the in-situ crosslink density, a method of manufacturing a crosslinked product, a crosslinked product obtained by the method, and a polymer substrate and an electronic device including the crosslinked product.

Apparatus and method for measuring in-situ crosslink density and crosslinked product and method of forming the same

A deformation measuring apparatus of a specimen includes: a holder which supports the specimen; a contact portion disposed facing the holder and including a hemispherical tip; a position controlling portion which adjusts a position of the contact portion along a thickness direction of the specimen to allow the hemispherical tip to be in contact with a surface of the specimen; a heating chamber which accommodates the holder and the contact portion and heating the specimen; and a sensing portion which measures at least one of a thermal deformation force (F) of the specimen or a thickness direction thermal expansion (&#x394;h) of the specimen.

Deformation measuring apparatus and method of evaluating deformation using thereof

An evaluating device of a flexural property includes a holder, a body disposed on the holder and capable of being moved along with a length of direction of the holder, a clamp coupled to the body to be rotated on the body and fixing a first side of the specimen to be evaluated, and a pressing part disposed over the clamp and pressing a second side of the specimen opposite to the first side and disposed upper than the first side of the specimen to bend the specimen, and an evaluation method of a flexural property of the bent specimen using the same.

Evaluating device of flexural property of material, and evaluation method using the same

A method for removing an organic ligand from a surface of a particle including:

Semiconductor device

Methods of removing surface ligand compounds

Provided are a polyamide combination that includes: a first polyamide including a repeating unit represented by Chemical Formula 1, a repeating unit represented by Chemical Formula 2, or a combination thereof; and a second polyamide including a repeating unit represented by Chemical Formula 3, and a film prepared using the polyamide combination. 

Polyamide combination film prepared by using same, and display device including the film

Provided is a method of fabricating a semiconductor device. Gate patterns are formed on a substrate including an NMOS transistor region and a PMOS transistor region. A spacer structure is formed on sidewalls of the gate patterns. The substrate in the PMOS transistor region is etched using the gate patterns and the spacer structure as etching masks, and thereby a recessed region is formed. A compressive stress pattern is formed in the recessed region, and a sidewall of the compressive stress pattern protrudes upwardly from an upper surface of the substrate. A mask oxide layer is formed on a sidewall of the spacer structure. The mask oxide layer is formed to cover a portion of the sidewall of the compressive stress pattern that protrudes upwardly from the upper surface of the substrate.

Semiconductor devices including compressive stress patterns and methods of fabricating the same

A polyimide precursor composition includes a polyamic acid including a repeating unit represented by Chemical Formula 1 and diisocyanate represented by Chemical Formula 2. OCN-A-NCO&#x2003;&#x2003;Chemical Formula 2 The diisocyanate represented by Chemical Formula 2 is included in an amount of about 0.01 moles to about 10 moles based on 100 moles of the repeating unit represented by Chemical Formula 1 in the polyamic acid.

Polyimide precursor composition, method for preparing polyimide, polyimide prepared by using the method, and film including the polyimide

A polymer including a structural unit represented by the following Chemical Formula 1, and a composition and a film including the same are provided. In the above formula at least one of Rand Ris either Chemical Formula 3 or Chemical Formula 4, as shown below. The polymer also includes units selected from polyamic acid, polyimide, polyaramid, polyamide, polyurethane, polycarbonate and polyacetal units and mixtures of such units.

Polymer, and composition and film including the same

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Suwon-si, South Korea

Young Suk Jung