Samsung Electronics Co., Ltd.

Young-Sub Yoo

Ji-Eun Lee

Ki-chul Kim

Han-Mei Choi

Jung-Min Oh

Bong-jin Kuh

Je-Woo Han

Gyung-Jin Min

Jong-sung Lim

Jun-ho Yoon

Sang-Ryol Yang

Sang-Yoon Woo

Tae-Jin Park

Yong-Moon Jang

Provided is a method of manufacturing a semiconductor device having a capacitor. The method includes forming a composite layer, including sequentially stacking on a substrate alternating layers of first through nth sacrificial layers and first through nth supporting layers. A plurality of openings that penetrate the composite layer are formed. A lower electrode is formed in the plurality of openings. At least portions of the first through nth sacrificial layers are removed to define a support structure for the lower electrode extending between adjacent ones of the plurality of openings and the lower electrode formed therein, the support structure including the first through nth supporting layers and a gap region between adjacent ones of the first through nth supporting layers where the first through nth sacrificial layers have been removed. A dielectric layer is formed on the lower electrode and an upper electrode is formed on the dielectric layer.

Method of fabricating semiconductor device

Growing community of inventors

Suwon-si, South Korea

Young-Sub Yoo