Samsung Electronics Co., Ltd.

Young Soo Sohn

Dae Hyun Kim

Jung Hwan Choi

Chul Woo Park

Seung Jun Bae

Tae Young Oh

Jong Pil Son

Jae Sung Kim

Won Jin Lee

A semiconductor memory device includes; a memory cell array comprising a first sub-memory cell array storing first data having a first characteristic and a second sub-memory cell array storing second data having a second characteristic different from the first characteristic, a first peripheral circuit operatively associated with only the first sub-memory cell array to execute at least one of a read operation and a write operation directed to a target memory cell of the first sub-memory cell array, and a second peripheral circuit operatively associated with only the second sub-memory cell array to execute at least one of a read operation and a write operation directed to a target memory cell of the second sub-memory cell array.

Semiconductor memory device with multiple sub-memory cell arrays and memory system including same

Provided is a profiling unit and method for profiling a number of times that an input/output address of a semiconductor device is accessed. The profiling unit includes a hash unit configured to produce at least one hash value by perform a hash operation on the input/output address, and a profiling circuit configured to profile the number of times that the input/output address is accessed by using the at least one hash value.

Profiling method of address access count of semiconductor device and profiling circuit using the same

A data amplifying circuit for an output driver has a swing level that is controllable according to an operation mode. The data amplifying circuit includes a mode responding circuit supplying an additional source current to a source node of an amplifying circuit in response to a mode selection signal. The mode responding circuit controls the supply of the additional source current in accordance with an operation mode. Another data amplifying circuit of a semiconductor device, according to the invention, includes a small-swing amplifier and a full-swing amplifier. The small-swing amplifier causes a swing level of the output signal to be relatively smaller, while the full-swing amplifier causes the output signal swing level be relatively larger. The small-swing and full-swing amplifiers are alternatively enabled in response to the mode selection signal.

Data amplifying circuit controllable with swing level according to operation mode and output driver including the same

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Seoul, South Korea

Young Soo Sohn