Samsung Electronics Co., Ltd.

Young-Soo Park

Hong-Sil Jeong

Takashi Noguchi

Wenxu Xianyu

Do-Young Kim

Suk-Pil Kim

June-mo Koo

Hans S Cho

Jang-yeon Kwon

Jung-hyun Lee

I-hun Song

Wan-jun Park

Huaxiang Yin

Jung-Hyun Lee

Kyung-bae Park

Ju-Ho Lee

Sung-Ho Choi

Jae-Yoel Kim

Hoon Bae Kim

Kook-Heui Lee

Sung-Oh Hwang

Yang-Wook Kim

Yo-sep Min

Soo-doo Chae

Yong-Jun Kwak

Chang-jung Kim

Sang-jun Choi

Sang-Wook Kim

Sang-jin Park

Young-Ho Jung

Pil-Kyu Kang

Young-Jin Cho

Jun-Ho Lee

Hyeon-Woo Lee

Myoung-jae Lee

Jun-ho Lee

Won-Il Roh

Sung-Ryul Yun

Young-min Choi

Sang-Myeon Han

Seung-Hoon Nam

Sung-Soo Park

Jae-Hak Chung

Sung-Chul Lee

Min-Koo Han

Byoung-Jae Bae

Jae-Chul Park

Chan-Soo Hwang

Jeong-Tae Oh

Yun-Hee Lee

Ji-sim Jung

In-Kyeong Yoo

Yong-Sang Yun

Kee-Won Kwon

Sang-min Shin

Suk-pil Kim

Sun-Ae Seo

June-key Lee

Kyoo-chul Cho

Xiaoxin Zhang

Tae-soo Kang

Kyeong-Chul Yang

Eun-ha Lee

Min-cheol Lee

Dong-joon Ma

Dong-Seek Park

Seung-Hyuk Chang

Sang-Min Shin

Yoon-dong Park

Hyuk Soo Lim

Won-tae Lee

Bon-jae Koo

Sung-Ho Park

Young-Nam Kim

Yang-Su Kim

Dong-hun Kang

Hyuck Lim

Kyun-Byoung Ko

Young-Kwan Cha

Choong-Rae Cho

Sang-Hwan Park

Sam-jong Choi

Jae-Kyun Kim

Young-Sam Lim

Hong-Seok Yang

Moon-Sang Lee

I-Hun Song

Seung-Gun Park

Gi-Jung Kim

Taek Jung Kim

Hee-Sung Kim

Se-Young Cho

Kyoung-Kook Kim

Ung-Hwan Pi

Jung-Ae Choi

Jae-Gwa Lee

Sun-Il Kim

Shin-Hyeok Han

Dong-Hun Kang

Sang-Phil Hong

The present invention relates to a voice signal processing method according to a state of an electronic device, and an electronic device therefor. An electronic device according to various embodiments comprises: a microphone; and a processor, wherein the processor can be configured to: obtain a voice signal using the microphone, check a state of the electronic device, and generate a first voice signal by filtering the voice signal using a first method, at least based on a determination of the electronic device being in a first state; generate a second voice signal by filtering the voice signal using a second method, at least based on a determination of the electronic device being in a second state; and transmit to an external electronic device a corresponding voice signal of the first voice signal or the second voice signal. In addition, other embodiments are possible.

Voice signal processing method according to state of electronic device, and electronic device therefor

An electronic device and a method for sending a response message according to a current status are provided. An operating method of the electronic device includes determining whether a received message is confirmed within a preset time, when the received message is not confirmed within the preset time, determining whether a contact number of a sender electronic device is a preset contact number, and when the contact number of the sender electronic device is the preset contact number, sending an automatic response message to the sender electronic device corresponding to a preset automatic response message status.

Electronic device and method for sending response message according to current status

A method of operating a haptic-enabled electronic device includes detecting an input interaction between the haptic-enabled electronic device and a touchscreen-enabled electronic device selecting a vibration command in associated with the input, and vibrating the haptic-enabled electronic device in response to the vibration command.

Method of operating and electronic device thereof

A data storage and a semiconductor memory device including the same are provided, the data storage including a lower electrode, a first discharge prevention layer stacked on the lower electrode, a phase-transition layer on the first discharge prevention layer, a second discharge prevention layer stacked on the phase-transition layer, and an upper electrode stacked on the second discharge prevention layer. The phase transition layer includes oxygen and exhibits two different resistance characteristics depending on whether an insulating property thereof changed. The first and second discharge prevention layers block discharge of the oxygen from the phase transition layer.

Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same

An embodiment of a semiconductor device includes a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, and a first semiconductor layer formed over the first insulation layer. At least one gettering region is formed in at least one of the first insulating layer and the first semiconductor layer. The gettering region includes a plurality of gettering sites, and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation.

Gettering structures and methods and their application

A semiconductor device and method thereof. The example method may include forming a semiconductor device, including forming a first layer on a substrate, the first layer including aluminum nitride (AlN), forming a second layer by oxidizing a surface of the first layer and forming a third layer on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes. The example semiconductor device may include a substrate including a first layer, the first layer including aluminum nitride (AlN), a second layer formed by oxidizing a surface of the first layer and a third layer formed on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes.

Semiconductor device and methods thereof

An encoding method and apparatus for a DCH (Dedicated Channel) encoder and a DSCH (Downlink Shared Channel) encoder in a transmitter for a mobile communication system including the DCH encoder for encoding k bits among 10 input TFCI (Transport Format Combination Indicator) bits and the DSCH encoder for encoding remaining (10&#x2212;k) bits among the input TFCI bits. The method comprises generating, by the DCH encoder, a first coded bit stream by encoding the k input bits into 32 bits, and outputting a (3k+1)-bit stream by puncturing the first coded bit stream according to a specific mask pattern corresponding to the k value; and generating, by the DSCH encoder, a second coded bit stream by encoding the (10&#x2212;k) input bits into 32 bits, and outputting a {3*(10&#x2212;k)+1}-bit stream by puncturing the second coded bit stream according to a specific mask pattern corresponding to the (10&#x2212;k) value.

Apparatus and method for transmitting TFCI bits for a hard split mode in a CDMA mobile communication system

Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.

Fabrication methods of a ZnO thin film structure and a ZnO thin film transistor, and a ZnO thin film structure and a ZnO thin film transistor

A ferroelectric capacitor having a three-dimensional structure, a nonvolatile memory device having the same, and a method of fabricating the same are provided. The ferroelectric capacitor may include a trench-type lower electrode, at least one layer formed around the lower electrode, a ferroelectric layer (PZT layer) formed on the lower electrode and the at least one layer and an upper electrode formed on the ferroelectric layer. The at least one layer may be at least one insulating interlayer and the at least one layer may also be at least one diffusion barrier layer. The at least one layer may be formed of an insulating material excluding SiOor may have a perovskite crystal structure excluding Pb.

Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the same

In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.

Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrate

A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.

Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same

A reflection mask for extreme ultraviolet (EUV) photolithography and a method of fabricating the same, in which the reflection mask includes a substrate, a lower reflection layer formed in a multi-layer structure on the substrate and including a material reflecting EUV light, an upper reflection layer formed in a multi-layer structure on the lower reflection layer and reflecting EUV light, and a phase reversing layer formed between the lower reflection layer and the upper reflection layer in a certain pattern and causing destructive interference between reflection light from the upper reflection layer and reflection light from the lower reflection layer. An incidence of a shadow effect can be reduced and unnecessary EUV light can be eliminated, so that a pattern on the reflection mask can be projected precisely on a silicon wafer. Since the phase reversing layer includes the same material as the reflection layer and an absorption layer, mask fabrication processes can be handled easily.

Reflection mask for EUV photolithography and method of fabricating the reflection mask

Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiOlayer formed on the insulating substrate, and a strained silicon layer formed on the SiOlayer.

Structure of strained silicon on insulator and method of manufacturing the same

Disclosed is a semiconductor wafer and method of fabricating the same. The semiconductor wafer is comprised of a semiconductor layer formed on an insulation layer on a base substrate. The semiconductor layer includes a surface region organized in a first crystallographic orientation, and another surface region organized in a second crystallographic orientation. The performance of a semiconductor device with unit elements that use charges, which are activated in high mobility to the crystallographic orientation, as carriers is enhanced. The semiconductor wafer is completed by forming the semiconductor layer with the second crystallographic orientation on the plane of the first crystallographic orientation, growing an epitaxial layer, forming the insulation layer on the epitaxial layer, and then bonding the insulation layer to the base substrate.

Semiconductor wafer and method of fabricating the same

Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented &#x3b3;-AlOlayer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented &#x3b3;-AlOlayer. The method may be used to manufacture a semiconductor device having higher carrier mobility.

Method of forming a more highly-oriented silicon layer and substrate having the same

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Suwon-si, South Korea

Young-Soo Park