Samsung Electronics Co., Ltd.

Young-soo Park

Jae-Chul Park

Chang-jung Kim

Jun-youn Kim

Sun-il Kim

I-hun Song

Young-jo Tak

Myoung-jae Lee

Wenxu Xianyu

Seung-eon Ahn

Su-hee Chae

June-key Lee

Huaxiang Yin

Chang-bum Lee

Bok-ki Min

Hans S Cho

Hyuck Lim

Bo-soo Kang

Jung-hyun Lee

Hyun-gi Hong

Dong-hun Kang

Yong-kyun Lee

Young-jin Cho

Taek Woon Kim

Hyung-su Jeong

Joo-sung Kim

Jung-sub Kim

Jin-sub Lee

Jae-Kyun Kim

Wan-tae Lim

Ha-nul Yoo

Hye-seok Noh

Ji-hye Yeon

Jae-Won Lee

Sang-Wook Kim

Sun-ae Seo

Yo-sep Min

Xianyu Wenxu

Kyoung-kook Kim

Sang-wook Kim

Ki-hwan Kim

Myung-jae Lee

Ki-Hwan Kim

In-kyeong Yoo

Ho-jung Kim

Jae-cheol Lee

Sung-soo Park

Kee-Won Kwon

Eun-ha Lee

Dong-Chul Kim

Moon-sang Lee

Moon-seung Yang

Young-Kwan Cha

Sam-jong Choi

Stefanovich Genrikh

Gi-jung Kim

Ran-ju Jung

Jae-Gwa Lee

Chang-Soo Lee

Hong-Sil Jeong

Sung-Hoon Kim

Dong-seek Park

Yoon-Dong Park

Young-Ho Jung

Sung-ryul Yun

Seung-hoon Lee

Suk-Pil Kim

Chan-Byoung Chae

Sung-chul Lee

Won-Il Roh

Won-Joo Kim

Seung-Hoon Nam

Jae-Hak Chung

Young-Bae Kim

David Seo

Jae-woong Hyun

Eun-hong Lee

Sang-moon Lee

Sung-ho Park

Joon-Young Choi

Jeong-Tae Oh

Chan-Soo Hwang

Sung-hoon Lee

Jae-chul Park

Seong-ho Cho

Jo-won Lee

Ung-hwan Pi

Ji-young Bae

Geun-Ho Lee

Seung-ryul Lee

Sang-joon Kim

Kyun-Byoung Ko

Won-je Park

Nam-goo Cha

Kyoo-Chul Cho

Hyung-jin Bae

Jae-won Lee

Seung-Gun Park

Sun-Ha Hwang

Soon-won Hwang

An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.

Apparatus for manufacturing a second substrate on a first substrate including removal of the first substrate

A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer.

Light-emitting diode (LED) device

A light-emitting device includes a substrate including a top surface and a first side surface, wherein an area of the top surface is larger than an area of the first side surface, and a light-emitting structure on the first side surface of the substrate, the light-emitting structure having a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer, wherein the light-emitting structure emits a first light having a first peak wavelength, and wherein an emission area of a first light emitted through the top surface of the substrate is larger than an emission area of a first light emitted through the first side surface of the substrate.

Light-emitting device and display device including the same

In a method of manufacturing a GaN substrate, a capping layer may be formed on a first surface of a silicon substrate. A buffer layer may be formed on a second surface of the silicon substrate. The second surface may be opposite the first surface. A GaN substrate may be formed on the buffer layer by performing a hydride vapor phase epitaxy (HVPE) process. The capping layer and the silicon substrate may be removed.

Method of manufacturing a gallium nitride substrate

A method of growing a nitride semiconductor layer may include preparing a substrate in a reactor, growing a first nitride semiconductor on the substrate at a first temperature, the first nitride semiconductor having a thermal expansion coefficient different from a thermal expansion coefficient of the substrate, and removing the substrate at a second temperature.

Method of growing nitride semiconductor layer

Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7&#x2266;k&#x2266;13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0.

Semipolar nitride semiconductor structure and method of manufacturing the same

A semiconductor device includes a substrate, a buffer layer on the substrate, and a plurality of nitride semiconductor layers on the buffer layer. The semiconductor device further includes at least one masking layer and at least one inter layer between the plurality of nitride semiconductor layers. The at least one inter layer is on the at least one masking layer.

Semiconductor devices and methods of manufacturing the same

Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic.

Nonvolatile memory transistor and device including the same

A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer.

Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure

According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type.

Semiconductor light emitting device including hole injection layer

Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.

Semiconductor light emitting devices having an uneven emission pattern layer and methods of manufacturing the same

Provided are a low-defect semiconductor device and a method of manufacturing the same. The method includes forming a buffer layer on a silicon substrate, forming an interface control layer on the buffer layer under a first growth condition, and forming a nitride stack on the interface control layer under a second growth condition different from the first growth condition.

Low-defect semiconductor device and method of manufacturing the same

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Yongin-si, South Korea

Young-soo Park