Freescale Semiconductor,inc.

Motorola Corporation

Everspin Technologies, Inc.

Young Sir Chung

Robert W Baird

Mark A Durlam

Bradley Neal Engel

Gregory W Grynkewich

Eric John Salter

Keenan L Evans

William J Dauksher

James Jen-Ho Wang

David P Mancini

Vijay Sarihan

Edward R Prack

Jonathan H Hammond

Steven R Young

Lei L Mercado

Donald F Weston

Jiang-kai Zuo

Phillip G Mather

Henry G Hughes

Ronald J Gutteridge

William Glaunsinger

Ian W Sorensen

A semiconductor process and apparatus provide a high-performance magnetic field sensor from two differential sensor configurations () which require only two distinct pinning axes (), where each differential sensor (e.g.,) is formed from a Wheatstone bridge structure with four unshielded MTJ sensors (-), each of which includes a magnetic field pulse generator (e.g.,) for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers (e.g.,) to eliminate micromagnetic domain switches during measurements of small magnetic fields.

Magnetic sensor design for suppression of barkhausen noise

In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die.

Ultra-thin die and method of fabricating same

An integrated circuit device is provided which comprises a substrate, a conductive line configured to experience a pressure, and a magnetic tunnel junction ('MTJ') core formed between the substrate and the current line. The conductive line is configured to move in response to the pressure, and carries a current which generates a magnetic field. The MTJ core has a resistance value which varies based on the magnetic field. The resistance of the MTJ core therefore varies with respect to changes in the pressure. The MTJ core is configured to produce an electrical output signal which varies as a function of the pressure.

Magnetic tunnel junction pressure sensors and methods

Methods and apparatus are provided for sensing physical parameters. The apparatus comprises a magnetic tunnel junction (MTJ) and a magnetic field source whose magnetic field overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. The MTJ comprises first and second magnetic electrodes separated by a dielectric configured to permit significant tunneling conduction therebetween. The first magnetic electrode has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.

Magnetic tunnel junction sensor

An integrated circuit device is provided which includes a heat source disposed in a substrate, and a Magnetic Tunnel Junction ('MTJ') temperature sensor disposed over the heat source.

Magnetic tunnel junction temperature sensors

Techniques of sensing a temperature of a heat source disposed in a substrate of an integrated circuit are provided. According to one exemplary method, a Magnetic Tunnel Junction ('MTJ') temperature sensor is provided over the heat source. The MTJ temperature sensor comprises an MTJ core configured to output a current during operation thereof. The value of the current varies based on a resistance value of the particular MTJ core. The resistance value of the MTJ core varies as a function of the temperature of the heat source. A value of the current of the MTJ core can then be associated with a corresponding temperature of the heat source.

Magnetic tunnel junction temperature sensors and methods

Methods and apparatus are provided for sensing physical parameters. The apparatus comprises a magnetic tunnel junction (MTJ) and a magnetic field source whose magnetic field overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. A magnetic shield is provided at least on a face of the MFS away from the MTJ. The MTJ comprises first and second magnetic electrodes separated by a dielectric configured to permit significant tunneling conduction therebetween. The first magnetic region has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.

Method for tunnel junction sensor with magnetic cladding

Sensor with magnetic tunnel junction and moveable magnetic field source

An integrated circuit device includes a magnetic random access memory ('MRAM') architecture and a smart power integrated circuit architecture formed on the same substrate using the same fabrication process technology. The fabrication process technology is a modular process having a front end process and a back end process. In the example embodiment, the smart power architecture includes a power circuit component, a digital logic component, and an analog control component formed by the front end process, and a sensor architecture formed by the back end process. The MRAM architecture includes an MRAM circuit component formed by the front end process and an MRAM cell array formed by the back end process. In one practical embodiment, the sensor architecture includes a sensor component that is formed from the same magnetic tunnel junction core material utilized by the MRAM cell array. The concurrent fabrication of the MRAM architecture and the smart power architecture facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate, resulting in three-dimensional integration.

MRAM embedded smart power integrated circuits

Techniques are provided for sensing a first current produced by an active circuit component. According to these techniques, a current sensor is disposed over the active circuit component. The current sensor includes a Magnetic Tunnel Junction ('MTJ') core disposed between a first conductive layer and a second conductive layer. The MTJ core can be used to sense the first current and produce a second current based on the first current sensed at the MTJ core.

Methods of implementing magnetic tunnel junction current sensors

An integrated circuit device () comprises a substrate () and MRAM architecture () formed on the substrate (). The MRAM architecture () includes a MRAM circuit () formed on the substrate (); and a MRAM cell () coupled to and formed above the MRAM circuit (). Additionally a passive device () is formed in conjunction with the MRAM cell (). The passive device () can be one or more resistors and one or more capacitor. The concurrent fabrication of the MRAM architecture () and the passive device () facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate (), resulting in three-dimensional integration.

Passive elements in MRAM embedded integrated circuits

An integrated circuit device includes a magnetic random access memory ('MRAM') architecture and at least one inductance element formed on the same substrate using the same fabrication process technology. The inductance element, which may be an inductor or a transformer, is formed at the same metal layer (or layers) as the program lines of the MRAM architecture. Any available metal layer in addition to the program line layers can be added to the inductance element to enhance its efficiency. The concurrent fabrication of the MRAM architecture and the inductance element facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate, resulting in three-dimensional integration.

3-D inductor and transformer devices in MRAM embedded integrated circuits

An integrated circuit device includes an active circuit component and a current sensor. The active circuit component may be coupled between a first conductive layer and a second conductive layer, and is configured to produce a first current. The current sensor is disposed over the active circuit component. The current sensor may includes a Magnetic Tunnel Junction ('MTJ') core disposed between the first conductive layer and the second conductive layer. The MTJ core is configured to sense the first current and produce a second current based on the first current sensed at the MTJ core.

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Chandler, AZ, United States of America

Young Sir Chung