Lg Display Co., Ltd.

Young Seung Jee

Jeong Oh Kim

Jae Young Oh

Soopool Kim

Joon Suk Lee

Suhyuk Kang

A method for fabricating a LCD having enhanced aperture ratio and brightness includes: forming a gate line, a gate electrode, a common electrode and a common line in a first mask process; depositing a gate insulating layer covering the gate line, the gate electrode and the common electrode; forming an active layer on the gate insulating layer, and an ohmic contact layer on the active layer in a second mask process; forming a data line, a source electrode, and a drain electrode facing the source electrode in a third mask process; depositing a protective layer over the data line, the source electrode and the drain electrode; forming a pixel contact hole in a fourth mask process; and forming a pixel electrode, wherein the pixel electrode is connected to the drain electrode through the pixel contact hole in a fifth mask process using a reverse tapered photo-resist pattern.

Method for fabricating a liquid crystal display device and an LCD device thereby

A liquid crystal display device includes: a first substrate having a plurality of gate lines and a plurality of data lines crossing each other; a second substrate facing the first substrate; a first pattern spacer having an inverse tapered shape on an inner surface of the first substrate; a second pattern spacer having an inverse tapered shape on an inner surface of the second substrate; a seal pattern on a peripheral edge of the first and second substrates; and a liquid crystal layer between the first and second substrates.

Liquid crystal display device and method of fabricating the same

A method for manufacturing a thin film transistor substrate using a maskless exposing device includes forming a data metal layer on a substrate having a gate pattern and common electrodes along with gate insulation layers, active layers, and ohmic contact layers for a thin film transistors; forming a photoresist on the data metal layer; exposing a first amount of light onto the photoresist at first regions, excluding a second region where data lines and thin film transistors are to be formed, by using a maskless exposing device; exposing a second amount of light onto the photoresist at third regions, where channels of the thin film transistors are to be formed, wherein the second amount of light is smaller than the first amount of light; and developing the first, second and third regions of the photoresist.

Growing community of inventors

Anyang-si, South Korea

Young Seung Jee