Hynix Semiconductor Inc.

Young Seon You

Yoo Nam Jeon

Ki Seog Kim

Sung Kee Park

Keun Woo Lee

Yong Soo Kim

Sung Yeol Park

Won Yeol Choi

Yong Wook Kim

Disclosed is a flash memory cell and method of manufacturing the same, and programming/erasing/reading method thereof. The flash memory cell comprises a first tunnel oxide film formed at a given region of a semiconductor substrate, a first floating gate formed on the first tunnel oxide film, a second tunnel oxide film formed over the semiconductor substrate and along one sidewall of the first floating gate, a second floating gate isolated from the first floating gate while contacting the second tunnel oxide film, a dielectric film formed on the first floating gate and the second floating gate, a control gate formed on the dielectric film, a first junction region formed in the semiconductor substrate below one side of the second tunnel oxide film, and a second junction region formed in the semiconductor substrate below one side of the first tunnel oxide film. Therefore, the present invention can implement 2-bit cell or 3-bit cell of a high density using the existing process technology. Further, it can reduce the manufacture cost and implement a high-integrated flash memory cell that is advantageous than a conventional flash memory cell in view of charge storage/retention as well as programming time.

Flash memory cell and method of manufacturing the same and programming/erasing reading method of flash memory cell

Flash memory cell and method of manufacturing the same and programming/erasing/reading method of flash memory cell

The present invention relates to a test pattern for measuring a contact resistance and method of manufacturing the same. In order to confirm that a contact resistance suitable for a semiconductor device before an actual process for manufacturing the device is performed, the present invention designs a test pattern for measuring the contact resistance depending on a design rule of a line contact actually applied to an actual device. At this time, a first line contact region and a second line contact region are formed between a word line so that a line contact region can form a pair; a plurality of sources are formed in the first line contact region and a plurality of sources are formed in the second line contact region wherein neighboring sources are connected by diffusion layers so that the first line contact region and the second line contact region can be electrically connected; and a plurality of line contact patterns are formed so that the plurality of the sources can be electrically connected by every two in each of the first and second line contact regions wherein the line contact pattern formed in the first line contact region and the line contact pattern formed in the second line contact region are alternately positioned. Therefore, the present invention can allow current for measuring the resistance sequentially along the first line contact region and the second line contact region to measure the line contact resistance in which the contact resistance in every source portion is considered.

Test pattern for measuring contact resistance and method of manufacturing the same

The present invention relates to a sensing circuit in a multi-level flash memory cell capable of exactly sensing a state of the multi-level flash memory cell by sensing four states of the multi-level flash memory cell based on first through third reference cells. The first reference cell has a threshold voltage by which a program or erase state of a floating gate can be determined in a state that a capacitor of the multi-level flash memory cell is discharged, a second reference cell has a threshold voltage by which a charge or discharge state of the capacitor can be determined with the floating gate of the multi-level flash memory cell being at a discharge state, and a third reference cell has a threshold voltage by which a charge or discharge state of the capacitor can be determined with the floating gate of the multi-level flash memory cell being at a program state.

Sensing circuit in a multi-level flash memory cell

Growing community of inventors

Kyungki-do, South Korea

Young Seon You