Samsung Electronics Co., Ltd.

Young Seon Son

Jung Ho Kim

Bio Kim

Jae Young Ahn

Hyung Joon Kim

Hanmei Choi

Ju Mi Yun

Su Jin Shin

Eun Yeoung Choi

Young Wan Kim

Byong Hyun Jang

A semiconductor device including a dielectric layer is provided. The semiconductor device includes a stack structure, and a vertical structure within the stack structure. The vertical structure includes a lower region having a first width and an upper region having a second width, greater than the first width. The vertical structure further includes two dielectric layers of which respective ratios of lower thicknesses in the lower region to upper thicknesses in the upper region are different from each other.

Semiconductor device including a dielectric layer

A semiconductor device includes gate electrodes vertically stacked on a substrate, and channel holes passing through the gate electrodes to extend perpendicularly to the substrate and including a gate dielectric layer and a channel area. The gate dielectric layer may be formed of a plurality of layers, and at least one layer among the plurality of layers may have different thicknesses in different locations.

Semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Young Seon Son