Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Samsung Sdi Co., Inc.

Samsung Displayco., Ltd.

Young Seok Park

Shin Ae Jun

Jongmin Lee

Taekhoon Kim

Eun Joo Jang

Tae Gon Kim

Seonmyeong Choi

Sung Woo Kim

Hyo Sook Jang

Jin A Kim

Yuho Won

Dae Young Chung

Shang Hyeun Park

Nayoun Won

Sung Chul Park

Jooyeon Ahn

Jiangwei Xu

Young Woo Jung

Ho Chul Hwang

Taek Hoon Kim

Sang Jun Moon

Jeong Gyu Jin

Byung Gon Han

Seo Yeon Park

Won Geun Shim

Jung Hwan Lim

Chul Ki Lee

A quantum dot includes a core including a first semiconductor nanocrystal and a multi-layered shell disposed on the core and including at least two layers, a production method thereof, and an electronic device including the same. The quantum dot does not include cadmium; the first semiconductor nanocrystal includes a Group III-V compound, the multi-layered shell includes a first layer surrounding at least a portion of a surface of the core, the first layer including a second semiconductor nanocrystal, the second semiconductor nanocrystal including a Group II-V compound, and a second layer disposed on the first layer, the second layer including a third semiconductor nanocrystal, the third semiconductor nanocrystal comprising a composition different from that of the second semiconductor nanocrystal.

Quantum dot, production method thereof, and electronic device including the same

A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.

Composition, patterned film, and electronic device including the same

A quantum dot including a seed including a first semiconductor nanocrystal including a first Group II-VI compound, a quantum well surrounding the seed, the quantum well including a second semiconductor nanocrystal including a Group IIIA metal except aluminum and a Group V element, and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal including a second Group II-VI compound, wherein the quantum dot does not include cadmium, an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal, and an ultraviolet-visible (UV-Vis) absorption spectrum curve of the quantum dot does not have an inflection point within a wavelength range of about 450 nanometers (nm) to about 600 nm, and a quantum dot composite and a device including the same.

Quantum dots, compositions and composites including the same, and electronic device including the same

A process for preparing a quantum dot of a core-shell structure including obtaining a first mixture including first precursor including a first metal, a ligand compound, and a solvent; adding a second precursor and a particle including a first semiconductor nanocrystal to the first mixture to obtain a second mixture; and heating the second mixture up to a reaction temperature and performing a reaction between the first precursor and the second precursor to form a layer of a shell including a crystalline or amorphous material, during formation of the layer of the shell or after formation of the layer of the shell, wherein the process includes adding an organic solution including an ammonium fluorinated salt including a solid salt having a melting point of greater than or equal to about 110&#xb0; C. to the second mixture.

Process for preparing a quantum dot, a quantum dot prepared therefrom, and an electronic device including the same

The present invention relates to a proxy apparatus and to a caching method of same. The caching method of the proxy apparatus according to one embodiment of the present invention includes the steps of: receiving a transmission request for content that can be divided into a plurality of blocks and instruction information for the playback position of the content from an external device; obtaining a header block that includes the header of the content when receiving the transmission request; identifying an intermediate block that corresponds to the playback position using the header; requesting and obtaining the intermediate block through a network when the identified intermediate block is not cached in the proxy apparatus; and transmitting to the external device at least a portion of the header and at least a portion of the intermediate block corresponding to the request. According to one embodiment of the present invention, even in a case where the size of a piece of content is great but only a specific portion is used, an efficient caching method and apparatus can be provided.

Caching proxy method and apparatus

Disclosed is an electronic device includes a flexible display, a support structure that supports the flexible display and a housing, into which the flexible display and the support structure are inserted. When the support structure is inserted into the housing, the flexible display is inserted into the housing together with the support structure while being wound in a specific direction. When the support structure extends outside the housing, the flexible display is deployed so that the flexible display is substantially flat.

Electronic device including flexible display

Growing community of inventors

Yongin-si, South Korea

Young Seok Park