Samsung Electronics Co., Ltd.

Young-Seog Kang

Chan Soo Hwang

In-Sung Kim

Sung-Soo Suh

Sang-Ho Lee

Sang-Gyun Woo

Han-Ku Cho

Dong-Seok Nam

Jong-Rak Park

Hyun-Jong Lee

Chan-Kyeong Hyon

A pattern matching method for use in manufacturing a semiconductor memory device increases a pattern matching rate between a GDS image and an SEM image. The pattern matching method includes extracting a scanning electron microscope (SEM) image and a graphic data system (GDS) image to perform a pattern matching; performing a two-dimensional Fourier transform (FFT) for the extracted GDS image and analyzing a low spatial frequency; deciding whether or not a pattern is a repeated pattern or non-repeated pattern by using the analyzed low spatial frequency; and limiting an X/Y range for a pattern matching when the decision result is for the repeated pattern, and then performing the pattern matching between the SEM image and the GDS image.

Pattern matching method in manufacturing semiconductor memory devices

An optical proximity correction (OPC) system and methods thereof are provided. The example OPC system may include an integrated circuit (IC) layout generation unit generating an IC layout, a database unit storing a first plurality of OPC models, each of the first plurality of OPC models associated with one of a plurality of target specific characteristics and a mask layout generation unit including a model selector selecting a second plurality of OPC models based on a comparison between the target specific characteristics associated with the plurality of OPC models and the generated IC layout, the mask layout generation unit generating a mask layout based on the IC layout and the selected second plurality of OPC models. A first example method may include storing a first plurality OPC models, each of the first plurality of OPC models associated with one of a plurality of target specific characteristics, generating an IC layout, selecting a second plurality of OPC models based on a comparison between the target specific characteristics associated with the first plurality of OPC models and the generated IC layout and generating a mask layout based on the generated IC layout and the selected second plurality of OPC models. A second example method may include applying a first OPC model to a first portion of a generated integrated circuit (IC) layout, applying a second OPC model to a second portion of the generated IC layout and generating a mask layout based on the generated IC layout after the application of the first and second OPC models.

System and method correcting optical proximity effect using pattern configuration dependent OPC models

Provided is a method of fabricating a photo mask. The method includes preparing a model group including optical proximity correction (OPC) models and generating a preliminary mask layout using an integrated circuit (IC) layout. A contour image may be produced from the preliminary mask layout through a simulation using an optical model. Subsequently, the preliminary mask layout may be compared with the contour image and the comparison result may be analyzed to produce analysis data for providing criteria used in selecting an OPC model. An OPC model suitable for the preliminary mask layout may be selected from the model group based on the analysis data. An OPC process may be performed on the preliminary mask layout using the selected OPC model to generate a mask layout.

Method of fabricating photo mask

A photomask includes a transparent substrate, and a plurality of light-shielding patterns repeatedly aligned on the transparent substrate in two dimensions. Each of the light-shielding patterns has length and width measurements that differ from each other. Further, the photomask includes at least one through hole penetrating a portion of each of the light-shielding patterns to expose the transparent substrate.

Photomask for forming photoresist patterns repeating in two dimensions and method of fabricating the same

In an optical system for forming a photoresist pattern on a substrate, an optical element such as a holographic optical element and an aperture plate provides an off-axis illumination beam having a hexapole. The photoresist pattern is formed to form structures such as contact pads, and includes first holes and second holes repeatedly arranged on the substrate. The hexapole includes four first poles symmetrically disposed with respect to an x-axis and a y-axis, and two second poles disposed in the x-axis so as to be symmetric with respect to the y-axis. The off-axis illumination beam may improve a resolution of the photoresist pattern and a depth of focus (DOF) of a light beam to be projected onto the substrate.

Optical system for providing a hexapole illumination and method of forming a photoresist pattern on a substrate using the same

A method of designing a phase grating pattern provides a modified form of illumination for a main mask, optimum for producing one or more target patterns on a wafer in a photolithographic process. Once the target pattern(s) to be formed on the wafer are decided, an area to be occupied by at least a portion of the phase grating is divided into a plurality of subcells, initial phase values are assigned to each of the subcells, and one of the subcells is randomly selected and the phase value last assigned thereto is changed, and the process is repeated. The process is in an iteration that changes the arrangement of the phase values assigned to the subcells until they converge on one which will provide the design for a phase grating which will produce a modified form of illumination optimum for use in forming the target pattern(s) on the wafer.

Method of designing phase grating pattern providing modified illumination optimum for producing a target pattern and method of manufacturing a photo mask system comprising the phase grating pattern

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Yongin-si, South Korea

Young-Seog Kang