Applied Materials, Inc.

Synaptics Corporation

Other

Will Semiconductor (shanghai) Co. Ltd.

Fmc Corporation

Matsushita Electric Industrial Co., Ltd.

Fingerprint Cards Ab

Rec Solar Pte. Ltd.

Young Seen Lee

Anchuan Wang

Nitin K Ingle

Jingchun Zhang

Paul Wickboldt

Patrick Smith

Hemant P Mungekar

Richard Klenkler

Yunyu Wang

Bob Lee Mackey

Ellie Y Yieh

Siqing Lu

Sanjay G Kamath

Manoj Vellaikal

Jason T Bloking

Srinivas D Nemani

Robert J Gove

Patrick A Worfolk

Jason Goodelle

Alvin Jee

Jin Ho Jeon

Guozhong Shen

Soonam Park

Qiwei Liang

James Anthony Schwindeman

Marek Mienko

Roderic Paul Quirk

Steven E Molesa

Zhong Qiang Hua

Arash Akhavan Fomani

Robert James Letchford

Steven H Kim

Robert Chen

Jing Wu

Farhan Ahmad

Irene Chou

Dmitry Lubomirsky

Li-Qun Xia

Daniel John Hoffman

Yasutoshi Okuno

Christopher Dennis Bencher

Shankar Venkataraman

Muhammad M Rasheed

Mihaela A Balseanu

Richard Hamilton Sewell

Mukund Srinivasan

Jingmei Liang

Lawrence Schloss

Vijay Parihar

Canfeng Lai

Erik Jonathon Thompson

Jeffrey C Munro

Bo Qi

Ching-Mei Hsu

Dongqing Yang

Xiaolin C Chen

Alan Francis Lyon

Khamvong Thammasouk

Jean Ling Lee

Sudhir R Gondhalekar

Pascale El Kallassi

Hiroshi Yuasa

Ying Rui

Hien-Minh Huu Le

Anjana M Patel

Jang Gyoo Yang

Kiran V Thadani

Walter Zygmunt

Bikram Kapoor

Andreas Bentzen

Bjoren Kurt Davis

Marlon E Menezes

Eric Jones

Sang Hyuk Kim

Lung-Tien Han

Bi Jang

Steve Molesa

Young Soo Kwon

Agnieszka Jakubowicz

Rionard Purnawan

Karen Greig

Chien Lam

Hiroaki Hayashigatani

Toshio Itoh

Roger Thompson

Nemia Grubisich

Weon Young Jung

Sang-jin Kim

Lan Chia Chan

Robert John Gove

Fingerprint sensors include a plurality of optical sensor elements, a collimator filter disposed above the plurality of optical sensor elements, and a display disposed above the collimator filter, wherein the display is a fingerprint imaging light source. The collimator filter has a plurality of apertures, and the plurality of optical sensor elements is configured to receive light transmitted through one aperture of the plurality of apertures.

Optical fingerprint sensor

Disclosed is a device for optical sensing, comprising: a display comprising a transparent substrate and a plurality of light emitters disposed above the transparent substrate; a transparent cover layer disposed above the display, wherein a top surface of the transparent cover layer provides an input surface for sensing an input object; and, an angled filter disposed below the transparent substrate of the display, wherein the angled filter is configured to allow light within a tolerance angle of an acceptance angle to pass through the angled filter, wherein the acceptance angle is centered around a non-zero angle relative to a normal of the input surface.

Systems and methods for optical sensing with angled filters

An optical sensor device includes: a display layer, comprising a light source configured to generate light incident on an input surface of the optical sensor device; an image sensor layer, disposed below the display layer, comprising an optical image sensor having a plurality of image sensor pixels; and a first ambient light filter layer, disposed between the display layer and the image sensor layer, configured to block one or more wavelengths of light.

Optical sensor with ambient light filter

Systems and methods for optical imaging are disclosed. The optical fingerprint sensor includes an image sensor array; a collimator filter layer disposed above the image sensor array, the collimator filter layer having an array of apertures; and an illumination layer disposed above the collimator filter layer. The collimator filter layer filters reflected light such that only certain of the reflected light beams reach optical sensing elements in the image sensor array. Employing the collimator filter layer prevents blurring while allowing for a lower-profile image sensor.

An optical sensor system includes: an input surface providing a sensing region for a biometric object; a plurality of display elements, disposed beneath the input surface, configured to emit light to provide a display; an aperture layer, disposed beneath the plurality of display elements; a collimator layer, disposed beneath the aperture layer; and a plurality of light sensing elements, disposed beneath the collimator layer, wherein the plurality of light sensing elements are configured to detect light from the sensing region that has passed through the aperture layer and the collimator layer.

Optical fingerprint sensor under a display

Disclosed are optical sensors, optical fingerprint sensor packages, and methods for forming same. An optical sensor comprises: a substrate; an image sensor disposed over the substrate; a light source disposed over the substrate; a light guide disposed over the image sensor; and, an encapsulant disposed over the light source, wherein the encapsulant is coupled to the light guide and comprises a surface positioned to reflect light emitted from the light source and direct the reflected light into the light guide.

Optical fingerprint sensor package

An optical fingerprint sensor includes: cover glass for receiving a finger; a transparent electrode layer below a bottom surface of the cover glass; an organic light emitting diode layer (OLED) below the transparent electrode layer; and a metal electrode layer below the OLED layer. Multiple openings extend through each of the transparent electrode layer, OLED layer, and metal electrode layer, and transmit reflected light reflected from a top surface of the cover glass when a finger is positioned over the top surface of the cover glass. A collimator or pinhole filter is below the metal electrode layer, and includes multiple apertures for transmitting the reflected light after the reflected light is transmitted through the multiple openings. An imager is below the bottom surface of the collimator or pinhole filter, and includes an array of pixels that detects the reflected light after the reflected light is transmitted through the multiple apertures.

Low profile illumination in an optical fingerprint sensor

Methods and systems for integrating image sensor structures with collimator filters, including manufacturing methods and associated structures for forming collimator filters at the wafer level for integration with image sensor semiconductor wafers. Methods of making an optical biometric sensor include forming a collimator filter layer on an image sensor wafer, wherein a plurality of light collimating apertures in the collimator filter layer are aligned with a plurality of light sensing elements in the image sensor wafer, and after forming the collimator filter layer on the image sensor wafer, singulating the image sensor wafer into a plurality of individual optical sensors.

Image sensor structures for fingerprint sensing

An optical biometric sensor includes an array of light sensing elements, an array of diverging optical elements, and an array of apertures disposed between the array of light sensing elements and the array of diverging optical elements. Light incident on the diverging optical elements within a limited acceptance angle passes through the apertures and towards the light sensing elements and light incident on the diverging optical elements outside of the limited acceptance angle diverges away from the apertures.

Biometric sensor with diverging optical element

Optical sensor using collimator

A biometric imager may comprise a plurality of sensor element traces formed in or on a sensor substrate which may comprise at least a portion of a display screen defining a biometric sensing area and forming in-active pixel locations; an auxiliary active circuit formed in or on the sensor substrate on the periphery of the biometric sensing area and in direct or indirect electrical contact with the sensor element traces; and providing a signal processing interface to a remotely located controller integrated circuit. The sensor element traces may form a portion of one dimensional linear sensor array or pixel locations in a two dimensional grid array capacitive gap biometric imaging sensor. The auxiliary circuit may provide pixel location selection or pixel signal amplification. The auxiliary circuit may be mounted on a surface of the display screen. The auxiliary circuit further comprising a separate pixel location selection controller circuit.

Signal strength enhancement in a biometric sensor array

Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The silicon selectivity also results from the presence of an ion suppressor positioned between the remote plasma and the substrate processing region. The ion suppressor reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.

Selective etch of silicon by way of metastable hydrogen termination

Methods are described for forming a flowable low-k dielectric layer on a patterned substrate. The film may be a silicon-carbon-oxygen (Si&#x2014;C&#x2014;O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. A similarly deposited silicon oxide layer may be deposited first to improve the gapfill capabilities. Alternatively, or in combination, the flow of a silicon-and-carbon-containing precursor may be reduced during deposition to change the properties from low-k to high strength roughly following the filling of features of the patterned substrate.

Low-K dielectric gapfill by flowable deposition

The present invention relates to cost effective production methods of high efficiency silicon based back-contacted back-junction solar panels and solar panels thereof having a multiplicity of alternating rectangular emitter- and base regions on the back-side of each cell, each with rectangular metallic electric finger conductor above and running in parallel with the corresponding emitter- and base region, a first insulation layer in-between the wafer and finger conductors, and a second insulation layer in between the finger conductors and cell interconnections.

Back junction back contact solar cell module and method of manufacturing the same

A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.

Dry-etch for silicon-and-carbon-containing films

Growing community of inventors

Newark, CA, United States of America

Young Seen Lee