Samsung Electronics Co., Ltd.

Young-Sam Lim

Kyoung-Moon Kang

Nam-Soo Kim

Jae-Hyun So

Young-Nam Kim

Dong-jun Lee

Sung-Taek Moon

Dong-Jun Lee

Dong-Min Kang

Sang-Mun Chon

Gi-Jung Kim

Bo-Ram Kang

Sei-Cheol Lee

Pil-Kyu Kang

Young-Soo Park

In an etching composition for an under-bump metallurgy (UBM) layer and a method of forming a bump structure, the etching composition includes about 40% by weight to about 90% by weight of hydrogen peroxide (HO), about 1% by weight to about 20% by weight of an aqueous basic solution including ammonium hydroxide (NHOH) or tetraalkylammonium hydroxide, about 0.01% by weight to about 10% by weight of an alcohol compound, and about 2% by weight to 30% by weight of an ethylenediamine-based chelating agent. The etching composition may effectively etch the UBM layer including titanium or titanium tungsten and remove impurities. A method of forming a bump structure may employ such an etching composition.

Etching composition for an under-bump metallurgy layer

An embodiment of a semiconductor device includes a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, and a first semiconductor layer formed over the first insulation layer. At least one gettering region is formed in at least one of the first insulating layer and the first semiconductor layer. The gettering region includes a plurality of gettering sites, and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation.

Gettering structures and methods and their application

Method of forming a bump structure using an etching composition for an under bump metallurgy layer

An additive composition for a slurry contains a first salt of polymeric acid including a first polymeric acid having a first weight average molecular weight and a first base material, and a second salt of polymeric acid including a second polymeric acid having a second weight average molecular weight and a second base material. A slurry composition is prepared by mixing the additive composition, a polishing particle composition, and water. When implementing a chemical mechanical polishing using the slurry composition, a favorable polishing selectivity is realized.

Additive composition, slurry composition including the same, and method of polishing an object using the slurry composition

The surface(s) of a polishing pad for polishing an object has a first portion including hydrophilic material and a second portion including hydrophobic material. The first portion of the polishing surface is located in a first region of the polishing pad and the second portion of the polishing surface is located in a second region of the polishing pad juxtaposed with the first region in the radial direction of the pad. The hydrophilic material may be a polymer resin that contains hydrophilic functional groups having OH and/or &#x2550;O at bonding sites of the polymer. The hydrophobic material may be a polymer resin that contains hydrophobic functional groups having H and/or F at bonding sites of the polymer. The polishing pad is manufactured by extruding respective lines of the hydrophilic and hydrophobic materials. The extruders and a backing are moved relative to each other such that the lines form concentric rings of the hydrophilic and hydrophobic materials.

Polishing pad of a chemical mechanical polishing apparatus and method of manufacturing the same

A polishing pad, platen, method of monitoring, method of manufacturing, and method of detecting using a pseudo window area, where the pseudo window area has a thickness less than a thickness of a polishing layer and a thickness greater than zero.

Polishing pad, platen, method of monitoring, method of manufacturing, and method of detecting

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Seoul, South Korea

Young-Sam Lim