Samsung Electronics Co., Ltd.

Industry-University Cooperation Foundation Hanyang University

Korea Research Institute of Standards and Science

Korea Advanced Institute of Science and Technology

Young-Pil Kim

Jin-bum Kim

Beom-jun Jin

Eun-ae Chung

Jung-Yun Won

Chul-woo Park

Byeong-Chan Lee

Ho-jung Kim

Sang-beom Kang

Sung-chul Lee

Jun-ho Lee

Jin-Gyun Kim

Tae Geol Lee

Myoung-Bum Lee

Hyun-Ho Choi

Sun-ghil Lee

Su-Jin Jung

Jong-wan Kim

Hion-Suck Baik

Bean-Jun Jin

Kwang-Jin Lee

Si-Young Choi

Beak-Hyung Cho

Jin-Won Lee

Tae-Young Chung

Bon-Young Koo

Ki-Hong Kim

Kwang-Ho Kim

Nam-Kyu Kim

Kwan-heum Lee

Gab-Jin Nam

Woo-sung Jeon

Seok-Hoon Kim

Hong Suk Kim

Sun-Ghil Lee

Dae Won Moon

Hak-Sung Kim

Myeon-Koo Kang

Young-woo Seo

Woo-bin Song

Ji-Young Min

Seung Jin Oh

Eun Hye Lee

Hyung-Ik Lee

Tae-Ouk Kwon

Myong Jong Kwon

In-sun Jung

Hee-don Hwang

Dohoon Lee

Myung Chan Gye

Chang-Hwan Park

EonSeon Jin

Heung-Kyu Park

Young-kug Moon

Su-Hyun Ryu

Mi-Young Hong

Eunkeu Oh

Ji-In Park

Yunho Gwak

Won-shik Lee

Eun-Song Lee

Miso Kim

Jin Saem Lee

The present specification relates to an astrocyte-specific nucleic acid aptamer and a use thereof. The astrocyte-specific nucleic acid aptamer, according to the disclosure in the present specification, is a DNA aptamer.

Astrocyte-specific nucleic acid aptamer and use thereof

The present invention relates to a genetically mutated bacteria strain for detecting an estrogenic compound and a method for detecting an estrogenic compound by using the same. More specifically, the present invention relates to a bacteria strain having an ability to detect an estrogenic compound, transformed by plasmid A comprising base sequences in which a gene for encoding a coactivator interacting with an estrogen receptor ligand binding domain (ER LBD) is conjugated to a gene for encoding &#x3bb;CI protein, and plasmid B in which a gene for encoding an estrogen receptor ligand binding domain (ER LBD) is conjugated to a gene for encoding &#x3b1;NTD protein, and a method for detecting an estrogenic compound by using same. The present invention can provide genetically mutated bacteria for detecting an estrogenic compound and a method for detecting an estrogenic compound by using same since the bacteria are based on estrogen receptor protein originated from the human body, and thus are environmentally friendly, and the detection of the bacteria can be performed in a very short time with low cost and labor by virtue of a relatively simple process.

Genetically-mutated bacterial strain for detecting estrogenic compound and method for detecting estrogenic compound using the same

An antifreeze member includes a metal substrate, and a first coating layer including a recombinant antifreeze protein in which a metal-binding protein is conjugated to a performance-enhancing reformed antifreeze protein, and being bonded to the metal substrate via the metal-binding protein.

Antifreeze member

Provided is a semiconductor device. The semiconductor device includes a fin on a substrate; a gate electrode cross the fin on the substrate; a source/drain formed on at least one of both sides of the gate electrode, and including a first film and a second film; and a stress film arranged between an isolation film on the substrate and the source/drain, and formed on a side surface of the fin.

Semiconductor device having a stress film on a side surface of a fin

In a method of forming an ohmic layer of a DRAM device, the metal silicide layer between the storage node contact plug and the lower electrode of a capacitor is formed as the ohmic layer by a first heat treatment under a first temperature and an instantaneous second heat treatment under a second temperature higher than the first temperature. Thus, the metal silicide layer has a thermo-stable crystal structure and little or no agglomeration occurs on the metal silicide layer in the high temperature process. Accordingly, the sheet resistance of the ohmic layer may not increase in spite of the subsequent high temperature process.

Method of manufacturing a semiconductor device

A semiconductor device comprises a substrate and first and second stress-generating epitaxial regions on the substrate and spaced apart from each other. A channel region is on the substrate and positioned between the first and second stress-generating epitaxial regions. A gate electrode is on the channel region. The channel region is an epitaxial layer, and the first and second stress-generating epitaxial regions impart a stress on the channel region.

Semiconductor device and method of fabricating the same

A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.

Method of fabricating semiconductor device including a recessed channel

There are provided a bio-chip for secondary ion mass spectrometry and a method of fabricating the same, the bio-chip, which is a bio-chip for analyzing a biochemical material using the secondary ion mass spectrometry, including: a substrate; and core-shell particles positioned above substrate, wherein the core-shell particles each include a metal nanoparticle as a core and a metal shell surrounding the metal nanoparticle.

Bio-chip for secondary ion mass spectroscopy and method of fabricating the same

Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

Semiconductor devices including elevated source and drain regions

In a memory device and in a method for controlling a memory device, the memory device comprises a magnetic structure that stores information in a plurality of domains of the magnetic structure. A read unit reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure. A position detector unit compares the information read by a read current from the read unit from multiple domains of the plurality of domains of the magnetic structure to identify the presence of an expected information pattern at select domains of the plurality of domains.

Identification of data positions in magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices

Phase-change and resistance-change random access memory devices are provided which include a phase-change or resistance-change memory cell array and a sense amplifier that is configured to amplify data read from the phase-change memory cell array. These random access memory devices are configured to read data from a first word line of the phase-change or resistance-change memory cell array and to insert a dummy burst in which no data is read when a first boundary crossing occurs during a burst mode operation. Related methods of operating phase-change and/or resistance-change random access memory devices in burst mode are also provided.

Phase-change and resistance-change random access memory devices and related methods of performing burst mode operations in such memory devices

A method according to example embodiments includes forming isolation regions in a substrate, the isolation regions defining active regions. Desired regions of the active regions and the isolation regions are removed, thereby forming recess channel trenches to a desired depth. The recess channel trenches are fog to have a first region in contact with the active regions and a second region in contact with the isolation regions. A width of a bottom surface of the recess channel trenches is less than that of a top surface thereof. The active regions and the isolation regions are annealed to uplift the bottom surface of the recess channel trenches. An area of the bottom surface of the first region is increased. A depth of the bottom surface of the first region is reduced.

Methods of manufacturing semiconductor devices having a recessed-channel

A memory device is comprised of a magnetic structure that stores information in a plurality of domains of the magnetic structure. A write unit writes information to at least one of the plurality of domains of the magnetic structure by applying a write current to the magnetic structure in response to a control signal. A read unit reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure in response to the control signal. A domain wall movement control unit is coupled to a portion of the magnetic structure and moves information stored in the plurality of domains in the magnetic structure to other domains in the magnetic structure in response to the control signal. The write unit, the read unit and the domain wall movement control unit are all coupled to the same control signal line that provides the control signal.

Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices

Disclosed herein is a gold nanoparticle (AuNP)-based peptide chip prepared by forming a monolayer of AuNPs onto a self-assembled monolayer constructed on a solid support, and then immobilizing a peptide on the AuNPs. The AuNPs can effectively amplify the mass signal of the peptide, thus making it possible to measure the mass change of the peptide in a simple and accurate manner. Also, when secondary ion mass spectrometric analysis (spectrum or imaging) is performed on the AuNP-based peptide chip, the activities of enzymes and related inhibitors can be effectively quantified. The disclosed invention enables various enzyme activities to be analyzed rapidly and accurately, and thus can provide an important method for disease diagnosis and new drug development through the elucidation of signaling and interaction mechanisms.

Construction of gold nanoparticle-based peptide chip, and assaying enzyme activity and inhibitor effect using secondary ion mass spectrometric analysis thereof

Methods of fabricating semiconductor devices including elevated source and drain regions

Growing community of inventors

Hwaseong-si, South Korea

Young-Pil Kim