Samsung Electronics Co., Ltd.

Young-moon Kim

Yoon-Dong Park

Seung-hoon Lee

Seung-Hwan Song

Sung-Jae Byun

Kyoung-Lae Cho

Ju-hee Park

A method of programming a non-volatile memory cell includes programming a first bit of multi-bit data by setting a threshold voltage of the non-volatile memory cell to a first voltage level within a first of a plurality of threshold voltage distributions. A second bit of the multi-bit data is programmed by setting the threshold voltage to a second voltage level based on a value of the second bit. The second voltage level is the same as the first voltage level if the second bit is a first value and the second voltage level is within a second of the plurality of threshold voltage distributions if the second bit is a second value. A third bit of the multi-bit data is programmed by setting the threshold voltage to a third voltage level based on a value of the third bit.

Growing community of inventors

Yongin-si, South Korea

Young-moon Kim