Gwangju Institute of Science and Technology

Young Min Song

Yong Tak Lee

Yong-Tak Lee

Chan Il Yeo

Jung Woo Leem

Seung Ho Choi

Min Seok Kim

Young Lae Kim

Sung Joon Jang

An apparatus for quantum-based physically unclonable functions is disclosed. The apparatus for quantum-based physically unclonable functions according to an embodiment of the present embodiment comprises a random nanostructure formed on a substrate by hydrothermal synthesis, wherein the random nanostructure emits a laser light of a predetermined pattern through the quantum activity of the random nanostructure.

Apparatus for quantum-based physically unclonable functions

The present invention relates to a silicon DBR structure-integrated light device, and a preparation method thereof, and more specifically, to a silicon DBR structure-integrated light device or vertical cavity light emitting diode, and a preparation method thereof, enabling preparation by a small number of layers and capable of reducing process time and costs due to a large contrast in refractive index of a silicon DBR structure formed by depositing silicon in a slanted or vertical manner.

Silicon DBR structure-integrated light element, and preparation method

A method of fabricating nanostructure for antireflection and a method of fabricating a photo device integrated with the nanostructure for antireflection are provided. The fabrication of the nanostructure for antireflection includes coating a solution containing a combination of metal ions with organic or inorganic ions on a substrate, sintering the coated solution using an annealing process to grow nanoscale metal particles, and chemically etching the substrate using the metal particles as mask or accelerator to form a subwavelength nanostructure on the surface of the substrate, thereby manufacturing the nanostructure for antireflection without an apparatus requiring a vacuum state using a simple method for a short amount of time to minimize reflection of light at an interface between a semiconductor material and the air, and producing a photo device having good luminous efficiency and performance at low cost in large quantities by applying it to the photo device.

Fabricating method of nano structure for antireflection and fabricating method of photo device integrated with antireflection nano structure

A method of fabricating an antireflective grating pattern and a method of fabricating an optical device integrated with an antireflective grating pattern are provided. The method of fabricating the antireflective grating pattern includes forming a photoresist (PR) pattern on a substrate using a hologram lithography process, forming a PR lens pattern having a predetermined radius of curvature by reflowing the PR pattern, and etching the entire surface of the substrate including the PR lens pattern to form a wedge-type or parabola-type antireflective subwavelength grating (SWG) pattern having a pointed tip on a top surface of the substrate. In this method, a fabrication process is simplified, the reflection of light caused by a difference in refractive index between the air and a semiconductor material can be minimized, and the antireflective grating pattern can be easily applied to optical devices.

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Gwangju, South Korea

Young Min Song