Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Samsung Display Co., Ltd.

Cheil Industries Inc.

Hyundai Motor Company

Kia Motors Corporation

Sungkyunkwan University

Soulbrain Co., Ltd.

Hanmi Holdings Co., Ltd.

Lsis Co., Ltd.

Hp Printing Korea Co., Ltd.

Young-Min Kim

Sang-cheol Park

Byung-sun Ahn

Bo-Sung Kim

Tae-Young Choi

Chung-Heon Lee

Yong-Woon Yoon

Hyun-Ji Song

Jaehou Nah

Yun-Jun Kim

Yoo-Jeong Choi

Changsu Shin

Seung-Hwan Cho

Keun-Kyu Song

Kang-Moon Jo

Joon-Young Moon

Seon-Pil Jang

Jaemyung Kim

Seung-Hwan Lee

Seok-Jun Won

Jae-Seung Lee

Young-Sun Kim

Young-Wook Park

Young-Dae Kim

Youn-Jin Cho

Kie-Hyun Nam

Kyung-hoon Kim

You-Jung Park

Hea-Jung Kim

Seung-Hee Hong

Sang-Hyeop Lee

Min-Soo Kim

Ji-Young Lee

Mun-Pyo Hong

Jong-woo Lee

Duck-Chul Hwang

Yong-Uk Lee

Joo-hwan Noh

Dong-ha Choi

Thomas Byunghak Cho

Jong-Soo Lee

Sung-Jae Lee

Hyo-Young Kwon

Soo-Jin Kim

Jin-hong Kim

Joon-hak Oh

Kwang-Kyu Bang

Joong-Ho Lee

Youn-Hee Nam

Go-Un Kim

Jaehyuk Jang

Joo-Hyung Lee

Young-Hoon Kim

Sung-Min Kim

Tae-Sung Kim

Keum-Nam Kim

Beohm-Rock Choi

Nam-Seok Roh

Hi-Kuk Lee

Na-Young Kim

Jae-Byung Park

Sang-Min Lee

Ki-Nyeng Kang

Sung-Hwan Kim

Hwan-Sung Cheon

Jae-hyoung Choi

Young-Soo Yoon

Bo Sung Kim

Mun-Ki Sim

Hae-Il Park

Sang-Kyun Kim

Chul-Ho Lee

Ki-beom Lee

Jung-Woo Kim

Cheol-Ju Yun

Tae-ho Kim

Gwan-Sun Lee

Hak-Sun Kim

Dong-Geun Lee

Han-Gu Kim

Young-Ugk Kim

Dae-seob Kweon

Jong-bo Shim

Sang-Cheol Park

Su-in Lee

Sang-Eun Park

Soo-Beom Jo

Sang-Il Han

Min-Ok Na

Sang-wook Han

Heeyoub Kang

Eunha Lee

Dong-cheol Ahn

Ki-Sung Kim

Dae-Jin Kim

Jee-Yun Song

Hyo-Chang Ryu

Young-Jun Lee

Hwi-jong Yoo

Youngugk Kim

A method for two-dimensional mapping of crystal information of a polycrystalline material may include acquiring a diffraction pattern acquired by scanning an electron beam to a polycrystalline material, generating a plurality of clusters by applying a clustering algorithm to the acquired diffraction pattern based on unsupervised learning, acquiring crystal information of the polycrystalline material by applying a parallel deep convolutional neural network (DCNN) algorithm to each of the plurality of generated clusters based on supervised learning, and generating a two-dimensional image in which the acquired crystal information is mapped.

Automated mapping method of crystalline structure and orientation of polycrystalline material with deep learning

A negative active material, including a silicon-carbon composite including silicon and amorphous carbon, a metal oxide, and a metal silicate.

Negative active material and rechargeable lithium battery including same

A negative active material for a rechargeable lithium battery and a rechargeable lithium battery including the same, the negative active material including secondary particles of agglomerated primary particles, the primary particles including Si particles and a first ceramic oxide on a surface of the Si particles; and amorphous carbon, wherein the amorphous carbon surrounds a surface of the primary particles and a surface of the secondary particles.

Negative active material for rechargeable lithium battery, and rechargeable lithium battery including same

A negative active material for a rechargeable lithium battery and a rechargeable lithium battery, the negative active material including secondary particles of agglomerated primary particles, the primary particles including Si particles with SiC on a surface of the Si particles; and an amorphous carbon surrounding the secondary particles, wherein a peak intensity ratio (I/I) of a peak intensity (I)) at a Si (111) plane relative to a peak intensity (I) at a SiC (111) plane is about 5 to about 50 measured by X-ray diffraction analysis using a CuKα ray.

Negative active material for rechargeable lithium battery and rechargeable lithium battery including the same

A negative active material for a rechargeable lithium battery includes a composite of silicon and crystalline carbon, wherein the silicon has an average particle diameter (D50) of about 10 nm to about 150 nm, and the crystalline carbon has an average particle diameter (D50) of about 5 μm to about 20 μm, and an aspect ratio of about 4 to about 10.

A negative active material composite includes a core and a coating layer around (surrounding) the core. The core includes amorphous carbon and silicon nanoparticles, the coating layer includes amorphous carbon, and an adjacent distance between the silicon nanoparticles is less than or equal to about 100 nm.

Negative active material composite for rechargeable lithium battery, method of preparing the same, and negative electrode and rechargeable lithium battery including the same

A low-noise amplifier in a receiver supporting a beam forming function may selectively change a phase shift for beam steering. The low-noise amplifier may include first and second transistors and a variable capacitance circuit connected to a gate of the second transistor. The variable capacitance circuit may selectively change capacitance thereof based on a capacitance control signal applied thereto according to beam-forming information, where the changed capacitance correspondingly causes a phase change in an output signal of the low-noise amplifier. A similar scheme may be employed for amplifiers in transmit signal paths to steer a transmit beam.

Low-noise amplifier supporting beam-forming function and receiver including the same

A negative active material for a rechargeable lithium battery and a rechargeable lithium battery including the same, the negative active material including a Si-carbon composite that includes Si nanoparticles and an amorphous carbon, wherein the negative active material has a sphericity of 0.7 or more, and a BET specific surface area of 10 m/g or less.

Provided is a storage device including a power management integrated circuit chip; multiple non-volatile memories configured to receive power from the power management integrated circuit chip; and a controller configured to control the non-volatile memories, wherein the controller checks a state of the power during a read operation and a write operation on the non-volatile memories and, when a power failure is detected in at least one of the non-volatile memories, implements a power failure detection mode regarding the read operation and the write operation on all of the non-volatile memories.

Storage device and storage system

A receiver includes an amplification block supporting carrier aggregation (CA). The amplification block includes a first amplifier circuit configured to receive a radio frequency (RF) input signal at a block node from an outside source, amplify the RF input signal, and output the amplified RF input signal as a first RF output signal. The first amplifier circuit includes a first amplifier configured to receive the RF input signal through a first input node to amplify the RF input signal, and a first feedback circuit coupled between the first input node and a first internal amplification node of the first amplifier to provide feedback to the first amplifier.

Radio frequency (RF) integrated circuit performing signal amplification operation to support carrier aggregation and receiver including the same

An electronic device includes: a switching regulator configured to generate a conversion voltage with respect to an input voltage, based on a switching signal of a first frequency, and output the conversion voltage; a stabilization circuit including a capacitor element connected to a load device via a first node and configured to generate a load voltage by stabilizing the conversion voltage by using the capacitor element and output the load voltage to the load device; a frequency sensing circuit configured to sense a frequency of the load voltage and output sensing information about the frequency of the load voltage; and a frequency booster circuit configured to form a first current path connected to the first node, based on the sensing information.

Electronic device that removes acoustic noise based on frequency booster

An adhesive tape sticking apparatus includes a chamber includes a lower chamber and an upper chamber. The lower chamber includes a first inner space and the upper chamber includes a second inner space. An adhesive tape sheet is positioned between the upper chamber and the lower chamber. A substrate support is movable upward and downward within the lower chamber and is configured to support a substrate. A differential pressure generator is configured to generate a differential pressure between the first inner space and the second inner space. A tape support plate positioned between a first sidewall of the lower chamber and a circumferential edge of the substrate. The tape support plate is configured to contact at least a portion of the adhesive tape sheet when the adhesive tape sheet bends downward toward the first inner space when the differential pressure is generated between the first and second inner spaces.

Adhesive tape sticking apparatus and method of manufacturing a semiconductor package using the same

A vacuum chuck includes an adsorption plate including porous materials, a housing including an accommodation part, a plurality of adsorption grooves, and a vacuum opening formed in the accommodation part. The adsorption plate is disposed in the accommodation part, and the plurality of adsorption grooves each have an arc shape and is formed in a surface of the accommodation part. The vacuum chuck further includes a vacuum line configured to supply vacuum pressure to the vacuum opening.

Vacuum chuck and semiconductor manufacturing apparatus having the same

Growing community of inventors

Suwon-si, South Korea

Young-Min Kim