Skhynix Inc.

Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Young-Min Eeh

Daisuke Watanabe

Toshihiko Nagase

Kazuya Sawada

Koji Ueda

Makoto Nagamine

Won-Joon Choi

Guk-Cheon Kim

Yang-Kon Kim

Cha-Deok Dong

Bo-Mi Lee

An electronic device that includes a first structure including a first magnetic layer, a second magnetic layer, and a tunnel barrier layer which is interposed between the first magnetic layer and the second magnetic layer; and a second structure disposed over the first structure, and including a magnetic correction layer for correcting a magnetic field of the first structure, wherein a width of a bottom surface of the second structure is larger than a width of a top surface of the first structure.

Electronic device and method for fabricating the same

An electronic device includes a semiconductor memory, and the semiconductor memory includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a ferromagnetic material with molybdenum (Mo) added thereto.

Electronic device

Growing community of inventors

Tokyo, Japan

Young-Min Eeh