Samsung Electronics Co., Ltd.

Young Kyu Sung

Tae Hun Kim

Su Yeol Lee

Jae Yoon Kim

Wan Tae Lim

Tae Sung Jang

Sung Joon Kim

Dong Yeoul Lee

Wan Ho Lee

Tae Young Park

Gam Han Yong

A semiconductor light emitting device including a floating conductive pattern is provided. The semiconductor light emitting device includes a first semiconductor layer including a recessed region and a protruding region, an active layer and a second semiconductor layer disposed on the protruding region, a contact structure disposed on the second semiconductor layer, a lower insulating pattern covering the first semiconductor layer and the contact structure, and having first and second openings, a first conductive pattern disposed on the lower insulating pattern and extending into the first opening, a second conductive pattern disposed on the lower insulating pattern and extending into the second opening, and a floating conductive pattern disposed on the lower insulating pattern. The first and second conductive patterns and the floating conductive pattern have the same thickness on the same plane.

Semiconductor light emitting device including floating conductive pattern

According to an example embodiment, a method includes forming a nitrogen vacancy surface layer by treating a surface of an n-type nitride semiconductor with inert gas plasma, and forming an oxygen-added nitride film by treating a surface of the nitrogen vacancy surface layer with oxygen-containing gas plasma, and forming an electrode on the oxygen-added nitride film. The nitrogen vacancy surface layer lacks a nitrogen element.

Method for forming electrode of n-type nitride semiconductor, nitride semiconductor device, and manufacturing method thereof

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Osan-si, South Korea

Young Kyu Sung