Lg Innotek Co., Ltd.

Suzhou Lekin Semiconductor Co., Ltd.

Young Kyu Jeong

Kyung Wook Park

Jung Hyeok Bae

Duk Hyun Park

Sang Youl Lee

June O Song

Kwang Ki Choi

Ji Hyung Moon

Hwan Hee Jeong

Joo Yong Jeong

Da Jeong Song

Young Hoon Kim

Min Ji Jin

Chung Song Kim

Dae Hee Lee

Tae Sung Lee

Eun Joo Kim

Jae Cheon Han

Joo Yong Jung

Joo Young Jeong

Jang Hoon Jeong

An embodiment provides a semiconductor device comprising: a substrate; a semiconductor structure disposed on the substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an activation layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a bonding layer disposed between the semiconductor structure and the substrate; a cover layer disposed between the bonding layer and the semiconductor structure; and an electrode pad disposed on the cover layer and spaced apart from the semiconductor structure, wherein: the semiconductor structure further comprises a stepped portion at which the lateral surface of the second conductive semiconductor layer, the lateral surface of the activation layer, and the lower surface of the first conductive semiconductor layer are exposed; the stepped portion is disposed at the outer portion of the semiconductor structure; and the cover layer is disposed to extend from a region vertically overlapping the electrode pad to a region vertically overlapping a part of the exposed lower surface of the first conductive semiconductor layer.

Semiconductor device

An embodiment relates to a light emitting module, a flash module, and a terminal including the same. The light emitting module according to an embodiment comprises: a semiconductor layer; a phosphor layer arranged on one surface of the semiconductor layer; a plurality of light emitting chips including a plurality of electrodes arranged on a surface facing one surface of the semiconductor layer; a first partition arranged at one side of the plurality of light emitting chips, and a second partition arranged at the other side of the plurality of light emitting chips so as to face the first partition; and an opaque molding part, which encompasses the plurality of light emitting chips such that the upper surface of the phosphor layer and the bottom surfaces of the plurality of electrodes are exposed to the outside, and is arranged on the inner side of the first and second partitions. The light emitting module according to the embodiment comprises: a semiconductor layer; a phosphor layer arranged on one surface of the semiconductor layer; a plurality of light emitting chips including a plurality of electrodes arranged on a surface facing one surface of the semiconductor layer; and an opaque molding part, which encompasses the plurality of light emitting chips such that the upper surface of the phosphor layer and the bottom surfaces of the plurality of electrodes are exposed to the outside.

Light emitting module, flash module, and terminal including same

Provided is a light emitting device. In one embodiment, a light emitting device including: a support member; a light emitting structure on the support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a protective member at a peripheral region of an upper surface of the support member; an electrode including an upper portion being on the first conductive type semiconductor layer, a side portion extended from the upper portion and being on a side surface of the light emitting structure, and an extended portion extended from the side portion and being on the protective member; and an insulation layer between the side surface of the light emitting structure and the electrode.

Light emitting device

A light emitting device is disclosed. The disclosed light emitting device includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, a second electrode layer disposed beneath the light emitting structure and electrically connected to the second-conductivity-type semiconductor layer, a first electrode layer including a main electrode disposed beneath the second electrode layer, and at least one contact electrode branching from the main electrode and extending through the second electrode layer, the second-conductivity-type semiconductor layer and the active layer, to contact the first-conductivity-type semiconductor layer, and an insulating layer interposed between the first electrode layer and the second electrode layer and between the first electrode layer and the light emitting structure. The first-conductivity-type semiconductor layer includes a first region and a second region having a smaller height than the first region, and the first region overlaps with the contact electrode.

Light emitting device and lighting apparatus including the same

Provided is a light emitting device. The light emitting device comprises: In one embodiment, a light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a conductive support member under the light emitting structure. The conductive support member comprises a first conductive support member and a second conductive support member. The second conductive support member has a thermal conductivity higher than that of the first conductive support member.

Light emitting device, light emitting device package, and lighting system

Disclosed is a light emitting device. The light emitting device includes a light emitting structure layer including a first semiconductor layer, an active layer, and a second semiconductor layer, an electrode electrically connected to the first semiconductor layer, an electrode layer under the light emitting structure layer, and a conductive support member under the electrode layer. A channel layer is between the second semiconductor layer and the electrode layer. A protrusion projected from at least one of edges of the conductive support member includes and having a rough surface.

Light emitting device having protrusions from a conductive support member light emitting device package, and lighting system

Disclosed are a method of fabricating a light emitting device includes the steps of: forming a plurality of compound semiconductor layers on a substrate, the substrate including a plurality of chip regions and isolation region; selectively etching the compound semiconductor layers to form a light emitting structure on each chip region and form a buffer structure on the isolation region; forming a conductive support member on the light emitting structure and the buffer structure; removing the substrate by using a laser lift off process; and dividing the conductive support member into the a plurality of chips of the chip regions, wherein the buffer structure is spaced apart from the light emitting structure.

Light emitting device and method thereof

Light emitting device and light emitting device package

Provided are a light emitting device and a light unit. The light emitting device includes a package body including a body, a plurality of electrodes on the body, and a concave portion on at least one of the plurality of electrodes, a light emitting chip including a convex portion corresponding to the concave portion to couple and attach the concave portion to the convex portion, the light emitting chip including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and an adhesion layer on a bottom surface of the light emitting chip.

Light emitting device and light unit having improved electrode and chip structures with concave/convex shapes

Disclosed is a light emitting device including, a second electrode layer, a light emitting structure that includes a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer and that is provided on the second electrode layer, a first electrode layer that includes a pad part and an electrode part connected to the pad part and that is provided on the light emitting structure, and a current blocking layer arranged between the second electrode layer and the light emitting structure in such a way that a part of the current block layer overlaps to correspond to the first electrode layer, wherein a width of the current blocking layer corresponding to the electrode part is different depending upon a clearance with the pad part.

Light emitting device and lighting instrument including the same

Disclosed is a light emitting device. The light emitting device includes a light emitting structure layer including a first semiconductor layer, an active layer, and a second semiconductor layer, an electrode electrically connected to the first semiconductor layer, an electrode layer under the light emitting structure layer, and a conductive support member under the electrode layer. The conductive support member includes a protrusion projecting from at least one edge.

Light emitting device, having protrusions from a conductive support member, lighting emitting device package, and lighting system

Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a conductive support member, a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the conductive support member, and an electrode on the light emitting structure layer. The conductive support member has a curved lateral surface recessed inward.

Method of manufacturing semiconductor light emitting device including step of performing etching process with respect to conductive support member

A light emitting device according to the embodiment includes a conductive support member having a step portion at an outer peripheral region thereof, a protective member for filling the step portion formed at the outer peripheral region of the conductive support member, a reflective layer over the conductive support member, and a light emitting structure over the reflective layer and the protective member.

Growing community of inventors

Seoul, South Korea

Young Kyu Jeong