Avago Technologies General IP (singapore) Pte. Ltd.

Other

Avago Technologies International Sales Pte. Limited

Avago Technologies Wireless IP (singapore) Pte. Ltd.

Applied Materials, Inc.

Young Kwon

Jung Hyun Kim

Sang Hwa Jung

Jung-Rin Woo

Moon Suk Jeon

Un Ha Kim

Richard C Ruby

Jung-Hyun Kim

David E Bockelman

Sung-Hwan Park

Moon-Suk Jeon

Marshall Maple

Joo Min Jung

Chan Hoe Koo

William Carrol Mueller

Paul D Bradley

Lueder Elbrecht

James Hoffman

Jeesu Kim

Mohammad Ardehali

Atsushi Kitani

Joo Young Jeon

Il Do Jung

Jung Rin Woo

Jaeyoung Kim

A front end radio frequency (RF) module including one or more first filter circuits configured to implement a front end function by filtering first signals communicated between one or more first antenna and a transceiver and one or more second filter circuits configured to implement at least a portion of an additional network function within the front end RF module by filtering second signals communicated between one or more second antennas and the transceiver.

Front end module (FEM) with integrated functionality

A device combines filter circuits to be connected to an antenna, enabling carrier aggregation for wireless communications over multiple RF frequency bands in different operational environments. The device includes first, second and third filter circuits having first, second and third matching networks and one or more first, second and third band pass filters with corresponding passbands, respectively. The device further includes multiple individual matching networks not dedicated to any of the first, second or third filter circuits, and a multi-state switch configured to provide different filter circuit combinations by selectively connecting at least two of the first, second and third filter circuits, respectively, and at least one individual matching network of the multiple matching networks. Each filter circuit combination includes a combined matching network having at least two of the first, second and third matching networks and the at least one individual matching network.

Switched multiplexer device selectively connecting multiple filter circuits to common node for carrier aggregation

Implementations described herein generally relate to a method and apparatus for processing substrates in a processing system. The method includes identifying, in a buffer chamber coupled to a transfer chamber of a processing system, a first substrate that has been in the buffer chamber longer than a predetermined duration and identifying a first destination chamber of the processing system for the first substrate. After identifying the first substrate, a buffer chamber time-out operation is performed. The buffer time out operation includes suspending movement of substrates from a load lock chamber to the transfer chamber and removing the first substrate from the buffer chamber.

Method and apparatus for handling substrates in a processing system having a buffer chamber

A linearizer comprises a delay compensation circuit, an envelope reshaping circuit and a phase shift unit. The delay compensation circuit is configured to delay an input signal and to output a delayed input signal to a power amplifier. The envelope reshaping circuit is configured to detect an envelope of the input signal and to generate a reshaped envelope signal. The phase shift unit configured to provide an envelope reshaped capacitance based on the reshaped envelope signal to the delayed input signal to reshape the delayed input signal.

Linearizer and radio frequency power amplifier using same

A power amplifying apparatus includes a radio frequency (RF) power amplifier, a supply modulating unit, a phase shifting unit, and an envelope shaping unit. The RF power amplifier receives an input RF signal and outputs an amplified RF signal. The supply modulating unit provides the RF power amplifier with a supply voltage which varies with an original envelope of the input RF signal. The phase shifting unit receives a control signal and shifts a phase of the input RF signal to be inputted to the RF power amplifier by a shift amount which varies with the control signal. The envelope shaping unit receives the original envelope and provides the phase shifting unit with the control signal which varies with the original envelope.

Power amplifying apparatus

A heterojunction bipolar transistor (HBT) hybrid type RF (radio frequency) power amplifier includes a first device including an input terminal for receiving an RF signal, a pre-driver stage for amplifying the received RF signal, and an output terminal, the input terminal, the pre-driver stage and the output terminal being disposed in or over a first substrate; and a second device having a main stage having an HBT amplifier circuit disposed in or over a second substrate to further amplify the RF signal amplified by the pre-driver stage. The RF signal further amplified by the main stage is output through the output terminal of the first device.

Hybrid power amplifier having electrical and thermal conduction path

A linearized power amplifier includes a first amplification stage having a first transistor for amplifying an input signal and outputting a pre-amplified signal, and a second amplification stage having a second transistor for amplifying the pre-amplified signal. A phase injection circuit, connected to the gate of the first transistor and the gate of the second transistor, adjusts the phase of the input signal based on the pre-amplified signal so as to compensate for AM-AM distortion and AM-PM distortion.

Power amplifier

Hybrid power amplifier comprising heterojunction bipolar transistors (HBTs) and complementary metal oxide semiconductor (CMOS) devices

A power amplifier circuit for amplifying an envelope modulated Radio Frequency (RF) signal with improved linearity and efficiency includes a power amplifier, and a variable load matching circuit coupled to an output port of the power amplifier. The input impedance of the variable load matching circuit is changed such that an output power of the power amplifier is at a first output power level, or a second output power level which is higher than the first output power level.

Pulsed dynamic load modulation power amplifier circuit

A power amplifier comprises a common source amplification stage and a first common gate amplification stage. The common source amplification stage includes a common source transistor for receiving a radio frequency (RF) input signal via a gate. The first common gate amplification stage is connected in cascode between a variable supply voltage source and the common source amplification stage, and amplifies an output of the common source amplification stage. The first common gate amplification stage includes a first common gate transistor, and a first gate bias controller configured to generate a first divided voltage based on a variable supply voltage of the variable supply voltage source, and to supply a first gate bias voltage generated by buffering the first divided voltage to a gate of the first common gate transistor.

A power amplifier including a MOSFET including a source supplied with a first DC power, a gate connected to an RF input signal, and a drain connected to a power supply terminal of an RF power amplification unit; a supply voltage modulation control unit that determines a DC gate voltage of the MOSFET based on an envelope of the RF input signal; and a bypass circuit connected between the drain and the power supply terminal. The MOSFET outputs a second DC power via the drain and amplifies the RF input signal based on a third DC power substantially identical to a differential between the first and the second DC power, and also outputs an RF power via the drain. The bypass circuit receives and rectifies the RF power to supply a recycled DC power to the power supply terminal of the RF power amplification unit.

A power amplifier includes first and second amplification stages. The first amplification stage is configured to amplify a radio frequency (RF) input signal. The second amplification stage includes at least one transistor configured to amplify an output of the first amplification stage, the second amplification stage being configured to have a capacitance between a gate of the at least one transistor and a first power supply voltage. The capacitance automatically varies with amplitude of the output of the first amplification stage.

Power amplifier including variable capacitor circuit

In accordance with a representative embodiment, an impedance matching circuit for use at an output stage of a power amplifier is disclosed. The impedance matching circuit comprises: an input port for receiving a frequency band signal; and a plurality of paths, each path being allocated with a principal band signal to be transmitted therethrough and including a path on-off network and a fixed-value impedance matching network. Depending on a type of the received frequency band signal, the path on-off network is configured to activate a selected one of the plurality of paths by rendering an input impedance of the selected path to have a lower absolute magnitude so that the signal is transmitted therethrough, and to deactivate the remaining paths of the plurality of paths by rendering the input impedance thereof to have a higher absolute magnitude so that the signal is not transmitted therethrough. The fixed-value impedance matching network matches a load impedance of the output port of each path to the input impedance thereof, thereby rendering the input impedance thereof to have a prescribed reference value with respect to the principal band signal when said path is activated by the path on-off network.

Impedance matching circuit capable of efficiently isolating paths for multi-band power amplifier

A bi-color license plate frame, for surrounding a license plate of a vehicle, comprises a rectangular body comprising an aperture that is adapted to show a license plate, and a wall defining a hollow frame space inside the wall, a plurality of light-emitting elements contained in the frame space, and a controller that is electrically connected to the light-emitting elements and that controls the light intensity of the light-emitting elements according to the braking status of the vehicle. The wall of the rectangular body is translucent to the light of the light-emitting elements, and comprises a light diffusion layer, whereby surface illumination is provided when the light-emitting elements are turned on. Bi-color may include metal look and color emitted by the light-emitting elements, or red or black color of the light-diffusion layer and color emitted by the light-emitting elements.

Growing community of inventors

Thousand Oaks, CA, United States of America

Young Kwon