Samsung Electronics Co., Ltd.

Seoul National University

Other

Young Kuk

Eun Kyung Lee

Byoung Lyong Choi

Jong Up Jeon

Yukeun Eugene Pak

Geunbae Lim

Hun Huy Jung

Hyunjung Shin

Je Hyuk Choi

Kyung-sang Cho

Byoung-Iyong Choi

Seong-joon Lim

Provided are single photon devices, single photon emitting and transferring apparatuses, and methods of manufacturing and operating the single photon devices. The single photon device includes a carrier transport layer disposed on a conductive substrate and at least one quantum dot disposed on the carrier transport layer. A single photon emitting and transferring apparatus includes a single photon device, an element that injects a single charge into the single photon device described above, a light collecting unit that collects light emitted from the single photon device, and a light transfer system that transmits light collected by the light collecting unit to the outside.

Single photon device, apparatus for emitting and transferring single photon, and methods of manufacturing and operating the same

Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.

Methods for site-selective growth of horizontal nanowires, nanowires grown by the methods and nanodevices comprising the nanowires

A probe of a scanning probe microscope (SPM) having a field-effect transistor (FET) structure at the tip of the probe, and a method of fabricating the probe are provided. The SPM probe having a source, channel, and drain is formed by etching a single crystalline silicon substrate into a V-shaped groove and doping the etching sloping sides at one end of the V-shaped groove with impurities.

Method of fabricating a probe of a scanning probe microscope (SPM) having a field-effect transistor channel

A probe of a scanning probe microscope (SPM) having a field-effect transistor (FET) structure at the tip of the probe, and a method of fabricating the probe are provided. The SPM prove having a source, channel and drain is formed by etching a single crystalline silicon substrate into a V-shaped groove and doping the etching sloping sides at one end of the V-shaped groove with impurities.

Scanning probe microscope (SPM) probe having field effect transistor channel and method of fabricating the same

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Seoul, South Korea

Young Kuk