Zena Technologies, Inc.

P-chip IP Holdings Inc.

Other

Harvard College

Itt Manufacturing Enterprises, Inc.

Sarnoff Corporation

Young-June Yu

Munib Wober

Peter Duane

Wlodek Mandecki

William E Eibon

Von Ertwine

Conrad Styczen

Joseph Wagner

Winnie N Ye

Kenneth B Crozier

Turgut Tut

A light-triggered transponder includes one or more of photo cells, a clock recovery circuit and a reverse antenna system. The clock recovery circuit (CRC) includes a photoconductor with a source terminal, a drain terminal for receiving a voltage, the photoconductor resistance varying with received light intensity. The CRC is configured to generate a recovered clock. A reverse antenna system connected to at least one photo cell and configured to transmit data. The photoconductor configured to produce a modulated voltage signal from an incident modulated light incident. The CRC can include an amplifier coupled to the source terminal of the photoconductor via a capacitor for receiving the modulated voltage signal and outputting an analog signal generated from the voltage signal. The CRC can include an inverter coupled to the amplifier and configured to digitize the analog signal of the amplifier.

Light-triggered transponder

A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.

Vertical pillar structured photovoltaic devices with mirrors and optical claddings

An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.

Active pixel sensor with nanowire structured photodetectors

Photodetector devices and methods for making the photodetector devices are disclosed herein. In an embodiment, the device may include a substrate; and one or more core structures, each having one or more shell layers disposed at least on a portion of a sidewall of the core structure. Each of the one or more structures extends substantially perpendicularly from the substrate. Each of the one or more core structures and the one or more shell layers form a Schottky barrier junction or a metal-insulator-semiconductor (MiS) junction.

Vertical pillar structured infrared detector and fabrication method for the same

Color filter array devices and methods of making color filter array devices are disclosed herein. A color filter array may include a substrate having a plurality of pixels thereon, one or more nanowires associated with each of the plurality of pixels, wherein each of the one or more nanowires extends substantially perpendicularly from the substrate, and an optical coupler associated with each of the one or more nanowires. A method of making a color filter array may include, making an array of nanowires, wherein each of the nanowires extend substantially perpendicularly from a substrate, disposing a transparent polymer material to substantially encapsulate the nanowires, removing the nanowires from the substrate, providing a pixel array comprising a plurality of pixels, wherein a hard polymer substantially covers an image plane of the pixel array, disposing the array of nanowires on the pixel array, and removing the transparent polymer encapsulating the nanowires.

Nanowire structured color filter arrays and fabrication method of the same

Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the plurality of nanowires extend essentially perpendicularly from the substrate.

Solar blind ultra violet (UV) detector and fabrication methods of the same

A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof and each recess filled with a transparent material. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.

Nanowire array based solar energy harvesting device

An embodiment relates to a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.

Nanowire photo-detector grown on a back-side illuminated image sensor

Described herein is a device comprising: a substrate; one or more of a nanostructure extending essentially perpendicularly from the substrate; wherein the nanostructure comprises a core of a doped semiconductor, an first layer disposed on the core, and a second layer of an opposite type from the core and disposed on the first layer.

Passivated upstanding nanostructures and methods of making the same

An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.

Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor

Various embodiments for etching of silicon nitride (SiN) lightpipes, waveguides and pillars, fabricating photodiode elements, and integration of the silicon nitride elements with photodiode elements are described. The results show that the quantum efficiency of the photodetectors (PDs) can be increased using vertical silicon nitride vertical waveguides.

Growing community of inventors

Cranbury, NJ, United States of America

Young-June Yu