Skhynix Inc.

Young Jun Yoon

Hyun Seung Kim

Sang Kwon Lee

Kyu Dong Hwang

Kwang Soon Kim

Young Hoon Kim

Woongrae Kim

Yoo Jong Lee

Kang Sub Kwak

A semiconductor device includes an input/output (I/O) line drive control circuit and a data I/O circuit. The I/O line drive control circuit is configured to generate drive control pulses having a generation sequence, wherein the generation sequence of the drive control pulses are controlled based on a command pulse and address latch signals, and wherein the address latch signals are set based on when the command pulse is generated to perform a read operation or a write operation. The command pulse is generated to perform a read operation or a write operation. The data I/O circuit controls data I/O operations of a plurality of bank groups based on the drive control pulses.

Semiconductor devices

A semiconductor device includes a burst control circuit configured to generate burst information depending on a logic level of a setting bit when an operation setting signal is inputted and configured to generate a burst control signal from the burst information in the case where a read signal is inputted. The semiconductor device also includes a data processing circuit configured to output output data by performing first and second burst operations for internal data, depending on a logic level of the burst control signal.

Semiconductor device

A semiconductor device may include a first buffer, a second buffer, a divider circuit and an internal signal generation circuit. The first buffer may buffer a first input signal and a second input signal to generate a first data strobe buffering signal and a first data strobe bar buffering signal. The second buffer may generate a second data strobe buffering signal based on the first input signal and a reference xvoltage. The divider circuit may divide the second data strobe buffering signal to generate a divided signal and a divided bar signal. The internal signal generation circuit may be configured to generate a first to fourth data latch timing signals having different phases based on the first data strobe buffering signal, the first data strobe bar buffering signal, the divided signal and the divided buffering signal.

Semiconductor device and system

A semiconductor system includes a controller and a semiconductor device. The controller outputs a clock signal, a chip selection signal and a command/address signal. The controller includes a controller termination circuit turned on during a read operation. The controller receives first data through an input/output (I/O) line coupled to the controller termination circuit during the read operation and outputs second data through the I/O line coupled to the controller termination circuit turned off during a write operation. The semiconductor device includes an internal termination circuit turned off during the read operation, outputs the first data through the I/O line coupled to the internal termination circuit based on the chip selection signal and the command/address signal during the read operation, and stores the second data inputted through the I/O line coupled to the internal termination circuit turned on during the write operation.

Semiconductor systems

A semiconductor device includes a strobe signal generation circuit. The strobe signal generation circuit generates a strobe signal which is toggled in synchronization with a multiplication clock signal during enablement periods of a toggling drive signal and a down drive signal. A postamble period is set according to the toggling drive signal and the down drive signal.

Semiconductor device configured to generate a strobe signal having various patterns

A semiconductor device includes a synthesis control signal generation circuit and a data output control circuit. The synthesis control signal generation circuit generates a synthesis control signal for determining a burst sequence from a latch control signal in response to a first burst mode command and a second burst mode command. The data output control circuit outputs data included in a bank group as internal data in response to the synthesis control signal.

A semiconductor device may include a first buffer, a second buffer, a divider circuit and an internal signal generation circuit. The first buffer may buffer a first input signal and a second input signal to generate a first data strobe buffering signal and a first data strobe bar buffering signal. The second buffer may generate a second data strobe buffering signal based on the first input signal and a reference voltage. The divider circuit may divide the second data strobe buffering signal to generate a divided signal and a divided bar signal. The internal signal generation circuit may be configured to generate a first to fourth data latch timing signals having different phases based on the first data strobe buffering signal, the first data strobe bar buffering signal, the divided signal and the divided buffering signal.

A semiconductor device includes a test data interface, a first data interface, and a second data interface. The test data interface generates first test data and second test data from data inputted through a test pad in response to a test control signal and outputs failure information to the test pad in response to a read control signal. The first data interface generates first aligned data from the first test data or the second test data in response to the test control signal. The second data interface generates second aligned data from the second test data.

A semiconductor system includes a controller and a semiconductor device. The controller generates command signals, a composite control signal, and data signals. The semiconductor device generates a first mode signal and a second mode signal according to the command signals. The semiconductor device includes a write control circuit suitable for receiving the composite control signal and the data signals to determine an execution/non-execution of a data masking operation and a data bus inversion (DBI) operation when a write operation or a masking write operation is performed according to the first and second mode signals.

Semiconductor devices and semiconductor systems including the same

A semiconductor device may include a data output circuit and control signal output circuit. The data output circuit may convert a first input signal and a second input signal sequentially inputted thereto into output data and may compare the first and second input signals with a storage datum to generate a first comparison signal and a second comparison signal. The control signal output circuit may detect logic levels of bits included in the first and second comparison signals to generate a first detection signal and a second detection signal, may generate a first flag signal and a second flag signal from the first and second detection signals in response to a storage flag signal, and may sequentially output the first and second flag signals as transmission control signals.

The semiconductor device includes a first drive control signal generator suitable for generating a first drive control signal from a test input signal, a first output driver suitable for being controlled according to the first drive control signal, a second drive control signal generator suitable for generating a second drive control signal from the first drive control signal, and a second output driver suitable for being controlled according to the second drive control signal.

A semiconductor device may include a first input/output (I/O) unit and a second I/O unit. The first I/O unit may include a first input path that receives a signal through a first pad and a first output path and a first I/O controller that output a signal to the first pad. The second I/O unit may include a second input path that receives a signal through a second pad and a second output path and a second I/O controller that output a signal to the second pad.

A semiconductor device may include a data output circuit and a control signal output circuit. The data output circuit may compare a first input signal or a second input signal with a storage datum to generate a first comparison selection signal and may compare the first input signal with the second input signal to generate a second comparison selection signal. The control signal output circuit may detect logic levels of bits included in the first and second comparison selection signals to generate first and second detection signals, generate first and second flag signals from the first and second detection signals in response to a storage flag signal, and sequentially output the first and second flag signals as transmission control signals.

Growing community of inventors

Icheon-si, South Korea

Young Jun Yoon