Yonsei University

Lg Display Co., Ltd.

Skhynix Inc.

Young Jun Tak

Hyun Jae Kim

Heesoo Lee

Tae Soo Jung

Jeong Woo Park

Jusung Chung

Doo Hyun Yoon

Su Seok Choi

Jeong Min Moon

Sungpil Ryu

Kiseok Chang

Jihwan Jung

Si Joon Kim

Seokhyun Yoon

Won Gi Kim

Wongi Kim

Won-Gi Kim

Sung Pyo Park

The present disclosure provides a phototransistor and a manufacturing method therefor, the phototransistor having a defective oxide ray absorption layer introduced to an oxide semiconductor phototransistor through a solution process or a defective oxide ray absorption part introduced to an interface between a gate insulation film and an oxide semiconductor layer through interface control, which forms damage, thereby improving light absorption in the range of a visible light region.

Oxide semiconductor phototransistor improved in visible light absorption rate and manufacturing method thereof

A semiconductor device includes a stack structure including conductive layers and insulating layers that are alternately stacked with each other, a first channel layer passing through the stack structure and including a metal oxide-based semiconductor, and a second channel layer adjacent to the first channel layer and including the metal oxide-based semiconductor, wherein the first channel layer has a higher oxygen content than the second channel layer and has a different thickness from the second channel layer.

Semiconductor device and manufacturing method of the semiconductor device

Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300&#xb0; C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300&#xb0; C.

Oxide thin film transistor and method of fabricating the same

Disclosed is a method for repairing an oxide thin film, including repairing the oxide thin film by forming a repairing material that contains an oxide at a defect of the oxide thin film.

Method for repairing oxide thin film and oxide thin-film device

The inventive concept relates to a thin film activation method, a thin film transistor fabrication method, and a substrate processing device, and more particularly, to a method of activating a thin film by using electrical energy, a method of fabricating a thin film transistor, and a device of processing a substrate. The thin film activation method according to an embodiment of the inventive concept may include supplying electrical energy to a thin film.

Thin film activation method using electrical energy and thin film transistor fabrication method

Provided are an oxide thin film, a method for post-treating an oxide thin film and an electronic apparatus. An oxide thin film is an oxide thin film with a single layer including a metal oxide, and the physical properties of the oxide thin film may change in the thickness direction thereof.

Oxide thin film, method for post-treating oxide thin film and electronic apparatus

Growing community of inventors

Seoul, South Korea

Young Jun Tak