National University of Singapore

Young Jun Shin

Hyunsoo Yang

Antonio Helio Castro Neto

Xuepeng Qiu

Gopinadhan Kalon

A graphene structure is provided. The graphene structure comprises a substrate layer and at least two graphene layers disposed on the substrate. The at least two graphene layers comprises a gate voltage tuned layer and an effective graphene layer and the effective graphene layer comprises one or more graphene layers. A magnetoresistance ratio of the graphene structure is determined by a difference in a charge mobility and/or a carrier density between the gate voltage tuned layer and the effective graphene layer. The charge mobility and/or the carrier density of the gate no voltage tuned layer is tunable by a gate voltage applied to the graphene structure. A magnetic field sensor comprising the graphene structure is also provided.

Graphene based magnetoresistance sensors

Various embodiments relate a method for depositing a layer onto a workpiece using plasma. The method comprises arranging the workpiece and a source material inside a vacuum chamber. The method also comprises applying energy to the source material to cause atoms of the source material to be ejected from a surface of the source material into a plasma. The method further comprises orientating the workpiece with respect to the source material to prevent direct propagation of the ejected atoms from the source material to a work surface of the workpiece and to permit deposition of the layer onto the workpiece by ejected atoms which impact the work surface after colliding with particles of the plasma. Various embodiments also provide a corresponding apparatus.

Growing community of inventors

Singapore, Singapore

Young Jun Shin