Hynix Semiconductor Inc.

Utstarcom, Incorporated

Young-Jun Park

Jin-Hong Ahn

Sang-Hoon Hong

Sang-Don Lee

Yil-Wook Kim

Jai-Yong Lee

A driving circuit for use in a non-volatile dynamic random access memory (NVDRAM) having a nonconductor which can trap electrons or holes includes an internal supply voltage generator for generating the plurality of internal supply voltages, each having at least two different voltage levels; a mode controller for determining an operation mode of the NVDRAM; a voltage level selector for selecting one voltage level of each internal supply voltage in response to the operation mode to thereby outputs the selected voltage level of each internal supply voltage to the row decoding block and the core area; a row decoding block for receiving the internal supply voltages and outputting the internal supply voltages in response to an inputted address; and a core area having a plurality of unit cells, each storing a data, for accessing the data in response to inputted voltage levels of the plurality of internal supply voltages.

Driving circuit for non-volatile DRAM

A method for allocating a dedicated channel for transmitting a packet at a code division multiple access (CDMA) media access control (MAC) layer control unit to transmit a packet data between a mobile station (MS) and a base station (BS) in a CDMA mobile communication system including the MS and the BS, includes the steps of: when the packet is generated, by a MAC layer control unit of the MS, determining a service option of the packet; if the service option of the packet is link-oriented, requesting to allocate a dedicated control channel (DCCH) and receiving the DCCH; requesting to allocate a dedicated traffic channel (DTCH) and receiving the DTCH; and transmitting the packet via the DTCH.

Method for allocating dedicated channel for transmitting packet in CDMA media access control (MAC) layer control unit

Growing community of inventors

Ichon-shi, South Korea

Young-Jun Park