Average Co-Inventor Count = 3.15
ph-index = 7
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Samsung Electronics Co., Ltd. (30 from 132,080 patents)
2. Samsung Sdi Co., Inc. (10 from 7,663 patents)
3. Georgia Tech Research Corporation (5 from 2,091 patents)
4. Leland Stanford Junior University (4 from 5,324 patents)
5. Sungkyunkwan University (1 from 1,251 patents)
6. Industry-University Cooperation Foundation Hanyang University (1 from 1,126 patents)
39 patents:
1. 11451084 - Electronic device for harvesting power from at least one power source and method for operating the same
2. 10923613 - Energy harvesting apparatus having light collecting particles
3. 10770637 - Energy harvester
4. 10541358 - Hybrid generator using thermoelectric generation and piezoelectric generation
5. 10468996 - Triboelectric generation device
6. 10355216 - Method of selective separation of semiconducting carbon nanotubes, dispersion of semiconducting carbon nanotubes, and electronic device including carbon nanotubes separated by using the method
7. 10103648 - Energy harvester
8. 9837933 - Energy harvester using mass and mobile device including the energy harvester
9. 9748095 - Controlled manufacturing method of metal oxide semiconductor and metal oxide semiconductor structure having controlled growth crystallographic plane
10. 9607771 - Flexible supercapacitor, method of manufacturing the same, and device including the flexible supercapacitor
11. 9608221 - Solar cell having organic nanowires
12. 9502152 - Method of selective separation of semiconducting carbon nanotubes, dispersion of semiconducting carbon nanotubes, and electronic device including carbon nanotubes separated by using the method
13. 9444031 - Energy harvester using mass and mobile device including the energy harvester
14. 9419544 - Energy harvesting device having self-powered touch sensor
15. 9305778 - Controlled manufacturing method of metal oxide semiconductor and metal oxide semiconductor structure having controlled growth crystallographic plane