Samsung Sdi Co., Inc.

Cheil Industries Inc.

Young Ju Shin

Kyoung Hun Shin

Kyoung Ku Kang

Ji Yeon Kim

Kyoung Soo Park

Kwang Jin Jung

Ja Young Hwang

Hyun Joo Seo

Woo Jun Lim

Kyu Bong Kim

Byeong Geun Son

Jae Sun Han

Do Hyun Park

Young Woo Park

Kang Bae Yoon

Woo Jung Shin

A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film having a differential scanning calorimeter onset temperature of 60&#xb0; C. to 85&#xb0; C., and a elastic modulus change of 30% or less, as calculated by Equation 1, below,Elastic modulus change(%)={()/}&#xd7;100&#x2003;&#x2003;[Equation 1] wherein Mis an initial elastic modulus in kgf/cmof the anisotropic conductive film as measured at 25&#xb0; C., and Mis a elastic modulus in kgf/cmof the anisotropic conductive film as measured at 25&#xb0; C. after the film is left at 25&#xb0; C. for 170 hours.

Semiconductor device connected by anisotropic conductive film

A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film including a polyurethane resin; at least one other resin selected from the group of an ethylene-vinyl acetate copolymer resin, an acrylonitrile resin, and a styrene resin; isobornyl acrylate; and conductive particles.

A semiconductor device connected by an anisotropic conductive film. The anisotropic conductive film includes a composition for an anisotropic conductive film including a first epoxy resin having an exothermic peak temperature of about 80&#xb0; C. to about 110&#xb0; C. and a second epoxy resin having an exothermic peak temperature of 120&#xb0; C. to 200&#xb0; C., as measured by differential scanning calorimetry (DSC). The first epoxy resin and the second epoxy resin are present in combined amount of about 30 wt % to about 50 wt % based on a total weight of the composition in terms of solid content. The second epoxy resin is present in an amount of about 60 to about 90 parts by weight based on 100 parts by weight of the first and second epoxy resins.

Provided is a semiconductor device, including an anisotropic conductive film connecting the semiconductor device, the anisotropic conductive film having a maximum stress of 0.4 kgf/mmor more; and a stress-strain curve having a slope (A) of greater than 0 and less than or equal to 0.2 kgf/(mm&#xb7;%) as represented by the following equation 1:slope()=(&#xbd;)/&#x2003;&#x2003;(1),

A semiconductor device connected using an anisotropic conductive adhesive composition, the anisotropic conductive adhesive composition including a thermosetting polymerization initiator; and tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate, wherein the tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate is present in the composition in an amount of 1 wt % to 25 wt %, based on the total weight of the composition in terms of solid content.

Semiconductor device connected by anisotropic conductive adhesive film

A semiconductor device connected by an anisotropic conductive film including a first insulation layer, a conductive layer, and a second insulation layer one above another, wherein the conductive layer has an expansion length of 20% or less in a width direction thereof, and the second insulation layer has an expansion length of 50% or more in a width direction thereof, the expansion length is calculated according to Equation 1, below, after glass substrates are placed on upper and lower sides of the anisotropic conductive film respectively, followed by compression at 110&#xb0; C. to 200&#xb0; C. for 3 to 7 seconds under a load of 1 MPa to 7 MPa per unit area of a sample,Increased ratio of expansion length (%)=[(length of corresponding layer in width direction after compression&#x2212;length of corresponding layer in width direction before compression)/length of corresponding layer in width direction before compression]&#xd7;100.&#x2003;&#x2003;[Equation 1]

A semiconductor device is bonded by an anisotropic conductive film composition. The anisotropic conductive film composition includes an ethylene-vinyl acetate copolymer, a polyurethane resin, and organic fine particles. The anisotropic conductive film composition has a melt viscosity of about 2,000 to about 8,000 Pa&#xb7;s at 80&#xb0; C.

Anisotropic conductive film composition, anisotropic conductive film, and semiconductor device

A semiconductor device connected by an anisotropic conductive film, the film having a storage modulus of 100 MPa to 300 MPa at 40&#xb0; C. after curing of the film, and a peak point of 80&#xb0; C. to 90&#xb0; C. in a DSC (Differential Scanning calorimeter) profile of the film.

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Uiwang-si, South Korea

Young Ju Shin