Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Korea Institute of Science and Technology

Young-Ju Park

Myeong-Cheol Kim

Jae-ho Min

Sang-min Lee

Jae-Hwang Sim

Jin-wook Lee

Dong-Chan Kim

Shi-Yong Yi

Myung-Hoon Jung

Hyung-yong Kim

Il Gyu Kim

Sung-Min Hwang

Jongchul Park

Do-hyoung Kim

Jong Min Baek

Kwang-sub Yoon

Seong-woon Choi

Keunhee Bai

Hak-Sun Lee

Soon-Kwang Hong

Seok-hwan Oh

Yoo-Jung Lee

YoungWoo Cho

Kyoung Woo Lee

Heung-sik Park

Dong-Ki Yoon

Dong-kwon Kim

Nam-Myun Cho

Su Hyun Bark

Min Huh

In-Young Jeon

Seungjun Kim

Seungju Park

Se-Hwan Na

Chung-Wan Oh

Young-Hoon Song

Dong-Hyuk Yeam

Eun-Kyu Kim

Soon Gyu Hwang

Ki-Young Sung

A semiconductor device includes a substrate, a first lower wiring line on the substrate, a first insulation layer on the first lower wiring line, a first dielectric barrier layer and a first etch stop layer sequentially stacked on the first insulation layer, a second insulation layer on the first etch stop layer, a first upper wiring line extending through the second insulation layer, the first etch stop layer, and the first dielectric barrier layer, and a first conductive via in the first insulation layer and electrically connecting the first lower wiring line and the first upper wiring line. An upper surface of the first conductive via protrudes above a lower surface of the first upper wiring line.

Semiconductor device

A method for forming a fine pattern includes forming line patterns and a connection pattern on a semiconductor substrate, the line patterns extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, and the connection pattern connecting portions of the line patterns adjacent to each other in the second direction, and performing an ion beam etching process on the connection pattern. The ion beam etching process provides an ion beam in an incident direction parallel to a plane defined by the first direction and a third direction perpendicular to a top surface of the semiconductor substrate, and the incident direction of the ion beam is not perpendicular to the top surface of the semiconductor substrate.

Method for forming a fine pattern

A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.

Semiconductor device including first and second trenches having substantially equal depths

An organic light emitting diode display device includes a display panel including a plurality of pixels; a data driver supplying a data signal to the plurality of pixels; a gate driver supplying a plurality of scan signals and a plurality of emission signals to the plurality of pixels, the gate driver including a plurality of stages, at least one of the plurality of stages having a first circuit block generating one of the plurality of scan signals and a second circuit block generating one of the plurality of emission signals using one of the plurality of scan signals; and a timing controller supplying a plurality of control signals to the data driver and the gate driver.

Organic light emitting diode display device

Fabricating method of semiconductor device and semiconductor device fabricated using the same method

Semiconductor devices and methods of forming semiconductor devices are provided in which a plurality of patterns are simultaneously formed to have different widths and the pattern densities of some regions are increased using double patterning. The semiconductor device includes a plurality of conductive lines each including a first line portion and a second line portion, where the first line portion extends on a substrate in a first direction, the second line portion extends from one end of the first line portion in a second direction, and the first direction is different from the second direction; a plurality of contact pads each of which is connected with a respective conductive line of the plurality of conductive lines via the second line portion of the corresponding conductive line; and a plurality of dummy conductive lines each including a first dummy portion extending from a respective contact pad of the plurality of contact pads, in parallel with the corresponding second line portion in the second direction.

Methods of forming semiconductor devices having narrow conductive line patterns

Example embodiments relate to a method for manufacturing a semiconductor device, wherein a metal gate electrode therein may be formed without a void in a lower portion of the metal gate electrode. The method may include providing a substrate, forming a dummy gate electrode on the substrate, forming a gate spacer on the substrate to be contiguous to the dummy gate electrode, forming a first recess by simultaneously removing a portion of the dummy gate electrode and a portion of the gate spacer, the first recess having an upper end wider than a lower end, forming a second recess by removing the dummy gate electrode remaining after forming the first recess, and forming a metal gate electrode by depositing a metal to fill the first and second recesses.

Method for manufacturing semiconductor device having a metal gate electrode

Semiconductor devices having narrow conductive line patterns and related methods of forming such semiconductor devices

A method of forming fine patterns of a semiconductor device by using carbon (C)-containing films includes forming an etching target film on a substrate including first and second regions; forming a plurality of first C-containing film patterns on the etching target film in the first region; forming a buffer layer which covers top and side surfaces of the plurality of first C-containing film patterns; forming a second C-containing film; removing the second C-containing film in the second region; exposing the plurality of first C-containing film patterns by removing a portion of the buffer layer in the first and second regions; and etching the etching target film by using the plurality of first C-containing film patterns, and portions of the second C-containing film which remain in the first region, as an etching mask.

Method of forming patterns of semiconductor device

A method of fabricating an integrated circuit device includes forming first and second preliminary mask structures on a hard mask layer in respective first and second regions of the substrate. Spacers are formed on opposing sidewalls of the first and second preliminary mask structures, and the first preliminary mask structure is selectively removed from between the spacers in the first region. The hard mask layer is etched using the spacers and the second preliminary mask structure as a mask to define a first mask pattern including the opposing sidewall spacers with a void therebetween in the first region and a second mask pattern including the opposing sidewall spacers and the second preliminary mask structure therebetween in the second region. An insulation layer is patterned using the first and second mask patterns as respective masks to define a first trench in the first region and a second trench in the second region having a greater width than the first trench, and first and second conductive patterns are formed in the first and second trenches.

Methods of forming fine patterns in integrated circuit devices and methods of manufacturing integrated circuit devices including the same

For integrated circuit fabrication, at least one spacer support structure is formed in a first area over a semiconductor substrate, and a mask material is deposited on exposed surfaces of the spacer support structure and on a second area over the semiconductor substrate. A masking structure is formed on a portion of the mask material in the second area, and the mask material is patterned to form spacers on sidewalls of the spacer support structure and to form a mask pattern under the masking structure. The spacer support structure and the masking structure are comprised of respective high carbon content materials that have been spin-coated and have substantially a same etch selectivity.

Method of fine patterning semiconductor device

A flat panel display device includes: a display panel; a driving circuit unit for applying a drive signal to the display panel; and a plurality of aging pads connected with the driving circuit unit and applying aging signals to the display panel, wherein each aging pad includes a plurality of sub-aging pads.

Aging pad and flat panel display device having the same

The present invention relates to a method of fusion for heteroepitaxial layers and overgrowth thereon. According to the present invention, a high quality heteroepilayer can be formed by patterning a fused semiconductor layer, overgrowing it with a persistent patterned character, and fusing other semiconductors having different lattice constants by means of utilizing the rate difference between the lateral growth rate and the vertical growth rate exhibited, on the above process. Further, according to the present invention, the lattice constant difference of the two semiconductors can be overcome and a high quality quantum structure can be formed. According to the present invention, the junction of two semiconductor materials having different lattice constants, as well as a good overgrowth on heteroepitaxial layers can be carried out. Accordingly to the present invention, the base material from which the new, as yet on realized, conceptive optoelectronic device can be made.

Method of fusion for heteroepitaxial layers and overgrowth thereon

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Seoul, South Korea

Young-Ju Park