Skhynix Inc.

Young-Ju Lee

Hyung-Suk Lee

Sook-Joo Kim

An electronic device including a semiconductor memory is provided. The semiconductor memory may include an interlayer dielectric layer having a hole; a conductive pattern filled in the hole; and a variable resistance element coupled with the conductive pattern over the conductive pattern and storing different data according to a resistance change, wherein the conductive pattern includes a carbon-containing conductive layer in a region adjacent to the variable resistance element.

Electronic device

Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: an interlayer dielectric layer formed over a substrate including first and second areas; a first contact plug contacted with the substrate through the interlayer dielectric layer of the second area; an anti-peeling layer formed over the interlayer dielectric layer including the first contact plug; a second contact plug contacted with the substrate through the anti-peeling layer and the interlayer dielectric layer in the first area; and a variable resistance pattern contacted with the second contact plug.

Growing community of inventors

Icheon-si, South Korea

Young-Ju Lee