Samsung Electronics Co., Ltd.

Young-Joon Rhee

Myung-Jae Park

Hyang-Shik Kong

Jang-Kun Song

Jae-Jin Lyu

Jeong-Ho Lee

Yoon-Sung Um

Hyeong-Jun Park

Nak-Cho Choi

Dong-Ho Lee

Won-Joo Kim

Jong-Soo Yoon

Kwon-Young Choi

Bong-Joo Kang

Seung-Taek Lim

Chung-Hyo Lee

Bum-Gee Baek

Thin film transistors are formed on a lower substrate, and red, green, blue and transparent color filters are formed thereon. An organic insulating layer is formed on the color filters, and pixel electrodes are formed thereon. A black matrix and a common electrode are formed on an upper substrate facing the lower substrate.

Four color liquid crystal display and panel therefor

Gate lines are formed on a substrate. A gate insulating layer, an intrinsic a-Si layer, an extrinsic a-Si layer, a lower film of Cr and an upper film of Al containing metal are sequentially deposited. A photoresist having thicker first portions on wire areas and thinner second portions on channel areas is formed on the upper film. The upper film on remaining areas are wet-etched, and the lower film and the a-Si layers on the remaining areas are dry-etched along with the second portions of the photoresist. The upper film, the lower film, and the extrinsic a-Si layer on the channel areas are removed. The removal of the upper film and the lower film on the channel areas are performed by wet etching, and the first portions of the photoresist are removed after the removal of the upper film on the channel areas.

Contact structure of semiconductor device, manufacturing method thereof, thin film transistor array panel including contact structure, and manufacturing method thereof

A gate conductor including a gate line, a gate pad and a gate electrode is formed on a substrate. A gate insulating layer, a semiconductor layer, a doped amorphous silicon layer and a conductive layer are deposited in sequence, and then a photoresist film pattern is formed thereon. The photoresist film pattern includes a first portion positioned between the to be formed source electrode and drain electrode, a second portion thicker than the first portion, and the third portion with no photoresist. A data conductor including a data line, a data pad, a source electrode, a drain electrode and a conductor pattern for a storage capacitor, an ohmic contact layer pattern and a semiconductor pattern are formed by etching the conductive layer, the doped amorphous silicon layer and the semiconductor layer using the photoresist film pattern. A plurality of color filters of red, green and blue having apertures exposing part of the drain electrode are formed thereon. A passivation layer made of acryl-based organic material having excellent planarization characteristic is formed thereon. A pixel electrode, an auxiliary gate pad and an auxiliary data pad connected to the drain electrode, the gate pad and the data pad via contact holes, respectively, are formed on the passivation layer. The contact hole exposing the drain electrode is located within the aperture.

Thin film transistor array panel for display and manufacturing method thereof

A thin film panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line that intersects the first signal line and includes first and second portions being substantially rectilinear and disposed on different straight lines and a connection connected to the first and the second portions; and first and second pixel electrodes disposed adjacent to the second signal line and overlapping the first and the second portions of the second signal line, respectively.

Thin film panel for preventing stitch defect

A thin film transistor array panel is provided, which includes: a gate line; first and second data lines insulated from the gate line; a thin film transistor connected to the gate line and the first data line; a pixel electrode disposed between the first data line and the second data line, spaced apart from the first and the second data lines, and coupled to the thin film transistor; and first and second projections connected to the pixel electrode and overlapping the first and the second data lines, respectively.

Thin film array panel

Thin film panel having particular pixel electrodes overlapping particular data line portions

A gate wire including a gate line, a gate pad and a gate electrode is formed on a substrate. A gate insulating layer, a semiconductor layer, a doped amorphous silicon layer and a conductive layer are deposited in sequence, and then a photoresist film pattern is formed thereon. The photoresist film pattern includes a first portion positioned between a source electrode and a drain electrode, a second portion thicker than the first portion, and the third portion with no photoresist. A data wire including a data line, a data pad, a source electrode, a drain electrode and a conductor pattern for storage capacitor, an ohmic contact layer pattern and a semiconductor pattern are formed by etching the conductive layer, the doped amorphous silicon layer and the semiconductor layer using the photoresist film pattern. A plurality of color filters of red, green and blue having apertures exposing part of the drain electrode are formed thereon. A passivation layer made of acryl-based organic material having excellent planarization characteristic is formed thereon. A pixel electrode, an auxiliary gate pad and an auxiliary data pad connected to the drain electrode, the gate pad and the data pad via contact holes, respectively, are formed on the passivation layer. The contact hole exposing the drain electrode is located within the aperture.

A liquid crystal display is provided, which includes a gate line formed on a first insulating substrate, a data line intersecting the gate line and insulated from the gate line, a pixel electrode provided in a pixel area defined by the intersection of the gate line and the data line, a second insulating substrate facing the first insulating substrate, a common electrode formed on the second insulating substrate, a liquid crystal layer interposed between the pixel electrode and the common electrode, a first cutout in the pixel electrode, and a second cutout provided in the common electrode and partitioning the pixel area into a plurality of domains along with the first cutout. The plurality of domains in the pixel area are classified into at least two types based on the presence of an organic insulating layer.

Liquid crystal display and thin film transistor array panel

A liquid crystal display is provided, which includes a gate line formed on a first insulating substrate, a data line intersecting the gate line and insulated from the gate line, a pixel electrode provided in a pixel area defined by the intersection of the gate line and the data line, a second insulating substrate facing the first insulating substrate, a common electrode formed on the second insulating substrate, a liquid crystal layer interposed between the pixel electrode and the common electrode, a first cutout in the pixel electrode, and a second cutout provided in the common electrode and partitioning the pixel area into a plurality of domains along with the first cutout. The plurality of domains in the pixel area are classified into at least two types based on thickness of the liquid crystal layer.

Growing community of inventors

Seoul, South Korea

Young-Joon Rhee