Samsung Electronics Co., Ltd.

Young Joon Jang

Hyung-Kyun Byun

Jin Won Kim

Jae-Sang Yun

In Bo Shim

Ohchul Kwon

Chun-Um Kong

Jeong-Su Hwang

Doo-Jin Yi

Junki Kim

Seon Woo Kim

Kyung Mun Kang

An operating method of a memory controller may include receiving a state analysis request of a memory from a host, determining a fragment state of the memory, determining a lifespan situation of the memory, generating an analysis result indicating whether a garbage collection is restricted, on the basis of the fragment state and the lifespan situation, and providing the analysis results to the host.

Operating method of memory controller to reduce lifespan damage, operating method of host and storage device

A storage device includes a nonvolatile memory device that includes a plurality of memory blocks, and a controller that uses some memory blocks of the plurality of memory blocks as a buffer area. Memory blocks storing invalid data from among the some memory blocks are invalid memory blocks, and the controller identifies memory blocks, of which an elapsed time after erase is greater than a reuse time, from among the invalid memory blocks as an available buffer size, and provides the available buffer size to an external host device.

Universal flash storage (UFS) device and computing device and computing device including storage UFS device for reporting buffer size based on reuse time after erase

Methods of programming firmware in a data storage device include pre-programming memory cells included in at least one nonvolatile memory of a plurality of nonvolatile memories using a first verification voltage higher than a first reference voltage before a surface mounting technology is applied to the nonvolatile memories.

Data storage having recovery function for threshold voltage distribution change of memory cells due to applying surface mounting technology and operating method

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Seoul, South Korea

Young Joon Jang