Electronics and Telecommunications Research Institute

Other

Young Joo Song

Bong Ki Mheen

Mi Jin Kim

Sang Hoon Kim

Seong Su Park

Jin Yeong Kang

Kyu Hwan Shim

Min Hyung Cho

Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.

Image sensor and method of driving transfer transistor of image sensor

Provided are an image sensor and a method of sensing the same. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device.

Low-voltage image sensor with sensing control unit formed within

Provided are a low-voltage image sensor and a method of driving a transfer transistor thereof, which are obtained by changing the structure and driving method of a typical transfer transistor of a 4-transistor CMOS transistor, and can eliminate the influence of a voltage or physical structure of a diffusion node on a reset or transfer operation of a photodiode. The image sensor includes a light receiving device for detecting light and a signal conversion unit for reading photocharge generated by the light receiving device to an external circuit. The signal conversion unit includes a transfer transistor including at least two gate electrodes. When the photocharge is transferred to a channel of a transfer gate electrode disposed closest to a photodiode, a transfer gate electrode disposed adjacent to a diffusion node remains turned off.

Low-voltage image sensor having multiple gates between a photodiode and a diffusion node for suppressing dark current and method of driving transfer transistor thereof

An image sensor operated in a pseudo pinch-off condition capable of reducing a reset voltage of a photodiode and reducing a dark current and fixed pattern noise generated due to discordance of characteristics between pixels is presented. The image sensor has a photosensitive pixel, a driving circuit and an intermediary circuit. The photosensitive pixel can have a photodiode generating a photoelectrons, a transfer transistor transferring the photoelectrons to a diffusion node, and a reset transistor resetting the diffusion node. The driving circuit generates a driving switching signal with respect to the transfer and resist transistors. The intermediary circuit changes characteristics of the signal to drive the photosensitive pixel in a pseudo pinch-off mode.

Image sensor for low-noise voltage operation

An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.

Optoelectronic device having dual-structural nano dot and method for manufacturing the same

The present invention relates to a fryer that can supply suitable moisture for oil therein, as well as refine the used oil conveniently. The oil contained a frying vessel can keep sufficient moisture through two connecting pipes connected with both the frying vessel and a water vessel, by sharing the water during flow or by difference of pressure of water head and oil head and the difference of specific gravity between two materials. The fryer also can refine and recycle the used oil so that the foods to be fried can be fried with fresh oil always.

Fryer

The present invention relates to a multipurpose fryer that can be used for cooking various foods. The fryer is composed of; a heater arranged in lower portion in the fryer; a net screen arranged over the heater; and a control unit arranged at an upper portion on the fryer, which is connected to both terminals of the heater to control the power supply; characterized by a space formed on an inclined mid-bottom of the fryer, which has an outlet communicated with a valve provided on an outer side of the fryer; and an auxiliary container defined as space beneath the mid-bottom and upper portion of end-bottom of the fryer and is extended to vertical direction along the side wall of the fryer, wherein its open portion is disjointably fitted by the control unit, its inside is provided with a auxiliary heater connected to the control unit, and a side of its lower portion is communicated with another valve provided on another side of the fryer. The fryer enables reducing energy consumption, thereby it can supply drinking water or washing water that is heated up by heat release from the fryer. Besides, using an additional pot for boiling or keeping warm food can also use it for multipurpose cooker and use it for water heater at need conveniently.

Multipurpose fryer

This invention relates to a watering means for a fryer to supply suitable moisture required during frying operation. A fryer including a watering means for a fryer according to the invention comprises a heating device such as a heating pipe or a heater for heating oil in frying vessel to a temperature suitable for frying food, a net positioned above said heating means and a bottleneck-shaped accumulating portion positioned at lower portion of the fryer vessel to collect bits of fried batter. An injector having a plurality of perforation is provided in the frying vessel to supply water or vapor to frying oil.

Growing community of inventors

Daejeon, South Korea

Young Joo Song