Hynix Semiconductor Inc.

Young Joo Kim

Bok Rim Ko

Youk Hee Kim

A pipe latch circuit comprises a reset signal generating unit which receives a read-write flag signal and a read period signal and generates a reset signal, wherein the reset signal is enabled upon entry into a write operation or after all data are outputted to an outside upon read operation, an input/output control signal generating unit which generates a plurality of input control signals and output control signals in response to a read strobe signal and a clock signal, and is reset in response to the reset signal, and a pipe latch unit which latches inputted data in response to the input control signals and outputs the latched data in response to the output control signals.

Pipe latch circuit and semiconductor memory device using the same

A high voltage switching circuit of a NAND type flash memory device that includes a clock level shifter for increasing an amplitude of a clock signal, a pass voltage generator for outputting a pass voltage by pumping a power source voltage in response to a clock signal with an increased amplitude, and a high voltage pass transistor for transferring a high voltage according to the pass voltage.

High voltage switching circuit of a NAND type flash memory device

The present invention discloses a high voltage switch circuit of a semiconductor device which can reduce a discharge time by supplying a higher voltage than a power voltage to a gate terminal of a discharge transistor in a discharge unit for discharging a high voltage.

High voltage switch circuit

The present invention relates to a pumping circuit. The pumping circuit comprises a first pumping block for pumping an input voltage, a first latch for latching the output of the first pumping block, a second pumping block for pumping the output of the first pumping block according to a control signal, a second latch for latching the output of the second pumping block, and a switching circuit for selectively outputting the outputs of the first and second latches according to the control signal. Thus, a program voltage and a program verify voltage of different levels are pumped. The ripple and active current can be reduced and the program efficiency can be increased.

Growing community of inventors

Hwaseong-si, South Korea

Young Joo Kim