Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Young-Joo Choi

Woo-Geun Lee

Hye-Young Ryu

Ki-Won Kim

Seung-Ha Choi

Kyoung-Jae Chung

Do-Hyun Kim

Kap-Soo Yoon

Pil-Sang Yun

Je-Hun Lee

Young-Wook Lee

Jae-Hyoung Youn

Dong-Ju Yang

Hyang-Shik Kong

Hong-Sick Park

Bong-Kyun Kim

Jong-Hyun Choung

Byeong-Jin Lee

Byoung-Joo Kim

Se-Hwan Yu

Sun-Young Hong

Kweon-Sam Hong

Yoon-Ho Kang

Nam-Seok Suh

Dong-Hoon Lee

Jin-Won Lee

Byung-Uk Kim

Seung-yong Lee

Young-Chul Park

Hyun-Kyu Lee

Sung-Haeng Cho

Joon-Woo Lee

Sang-Hoon Jang

Young-Jun Jin

Min-Ki Lim

Hee-Jun Byeon

Jong-Hyun Jeong

Suk-Il Yoon

Jae-Woo Park

Soon-Beom Huh

Seung-Jae Yang

Sun-Joo Park

Sung-Gun Shin

Se-Hwan Jung

Doo-Young Jang

Ky-Sub Kim

Oh-Hwan Kweon

A display substrate and its fabricating method have been disclosed. In a horizontal-field-mode liquid crystal display device, while maintaining five mask processes, additional direct contact has been formed to implement a narrow bezel.

Display substrate and method of fabricating the same

A display substrate including a lower common electrode disposed on a substrate, an insulating layer disposed on the lower common electrode, a gate pattern including a gate electrode disposed on the insulating layer and a common electrode contact part and a direct contact part spaced apart from the gate electrode, a gate insulating layer disposed on the gate pattern, a semiconductor layer disposed on the gate insulating layer, an etch stopping layer disposed on the gate insulating layer, source and drain electrodes disposed on the etch stopping layer, pixel part extending from the source and drain electrodes, a first conductive layer connected to the common electrode contact part, a second conductive layer connected to the direct contact part, and a passivation layer disposed on the source and drain electrodes, the first conductive layer, and the second conductive layer.

Display substrate including direct contact part and method of fabricating the same

Disclosed are a display substrate, of which productivity is improved by decreasing five mask (M) processes utilized for fabricating the display substrate used in a liquid crystal display device in a horizontal field (Plane to Line Switching (PLS)) mode to four mask processes, and a method of fabricating the same.

A method of manufacturing a color filter substrate includes forming a plurality of trenches having a predetermined depth by etching a surface of a transparent substrate, disposing a color filter material in the plurality of trenches to form a color filter layer, and forming a transparent electrode on the transparent substrate including the color filter layer therein.

Method of manufacturing thin film transistor substrate having etched trenches with color filter material disposed therein

A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Thin film transistor panel having an etch stopper on semiconductor

A thin film transistor array substrate capable of reducing degradation of a device due to degradation of an oxide semiconductor pattern and a method of fabricating the same are provided. The thin film transistor array substrate may include an insulating substrate on which a gate electrode is formed, a gate insulating film formed on the insulating substrate, an oxide semiconductor pattern disposed on the gate insulating film, an anti-etching pattern formed on the oxide semiconductor pattern, and a source electrode and a drain electrode formed on the anti-etching pattern. The oxide semiconductor pattern may include an edge portion positioned between the source electrode and the drain electrode, and the edge portion may include at least one conductive region and at least one non-conductive region.

Thin film transistor array substrate and method of fabricating the same

Method of manufacturing color filter substrate wherein a transparent substrate is etched to form a plurality of trenches to receive color filter material

A display substrate includes a gate line extending in a first direction on a base substrate, a data line on the base substrate and extending in a second direction crossing the first direction, a gate insulating layer on the gate line, a thin-film transistor and a pixel electrode. The thin-film transistor includes a gate electrode electrically connected the gate line, an oxide semiconductor pattern, and source and drain electrodes on the oxide semiconductor pattern and spaced apart from each other. The oxide semiconductor pattern includes a first semiconductor pattern including indium oxide and a second semiconductor pattern including indium-free oxide. The pixel electrode is electrically connected the drain electrode.

Display substrate and method of manufacturing the same

A display substrate includes a gate wire formed on an insulating substrate, a semiconductor pattern formed on the gate wire and containing a metal oxynitride compound, and a data wire formed on the semiconductor pattern to cross the gate wire. The semiconductor pattern has a carrier number density ranging from 10/cmto 10/cm.

A display substrate includes; a gate pattern including a gate electrode disposed on a substrate, a gate insulation layer disposed on the substrate and the gate pattern, an insulation pattern including; a first thickness part disposed on a first area of the gate insulation layer overlapping the gate electrode and a second thickness part disposed on a second area of the gate insulation layer adjacent to the first area, an oxide semiconductor pattern disposed on the first thickness part of the first area, an etch stopper disposed on the oxide semiconductor pattern, a source pattern including a source electrode and a drain electrode which contact the oxide semiconductor pattern, and a pixel electrode which contacts the drain electrode.

A display device includes a gate pattern, a semiconductor pattern, a source pattern and a pixel electrode are provided. The gate pattern is formed on a base substrate and includes a gate line and a gate electrode. The semiconductor pattern is formed on the base substrate having the gate pattern and includes an oxide semiconductor. The source pattern is formed from a data metal layer and formed on the base substrate having the semiconductor pattern, and includes a data line, a source electrode and a drain electrode. The data metal layer includes a first copper alloy layer, and a lower surface of the data metal layer substantially coincides with an upper surface of the semiconductor pattern. The pixel electrode is formed on the base substrate having the source pattern and electrically connected to the drain electrode. Thus, manufacturing processes may be simplified, and reliability may be improved.

Display device and method of manufacturing the same

An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.

Etchant composition, and method of fabricating metal pattern and thin film transistor array panel using the same

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Yongin-si, South Korea

Young-Joo Choi